EN29LV800DT-70BIP2A
| Part Description |
8Mbit Parallel NOR Flash, 3.0V, 70ns, Top Boot, TFBGA-48, Industrial |
|---|---|
| Quantity | 1,040 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 48-TFBGA (6x8mm) | Memory Format | FLASH | Technology | NOR Flash | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 8 Mbit | Access Time | 70 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 8 µs | Packaging | 48-TFBGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 1M x 8 / 512K x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of EN29LV800DT-70BIP2A – 8Mbit Parallel NOR Flash, 3.0V, 70ns, Top Boot, TFBGA-48, Industrial
The EN29LV800DT-70BIP2A is an 8 Mbit NOR Flash memory device (1,024K × 8 / 512K × 16) in a 48-ball TFBGA (6 × 8 mm) package, designed for industrial embedded systems. It implements a parallel NOR architecture with Top Boot sector organization and operates from a single 3.0 V supply, delivering fast access for code and firmware storage.
With 70 ns access time, sector-based erase/program capability and industrial temperature range, this device is targeted at applications that require reliable non-volatile code storage, in-field updates and robust operation across −40 °C to 85 °C.
Key Features
- Memory Organization – 8.389 Mbit organized as 1M × 8 or 512K × 16 for flexible data and code storage configurations.
- Fast Read Performance – 70 ns access time to help eliminate wait states in high-performance microprocessor systems.
- 3.0 V Single-Supply Operation – Operates from 2.7 V to 3.6 V to minimize system power-rail complexity.
- High Program/Erase Performance – Typical byte/word program time 8 µs; typical sector erase 100 ms; typical chip erase 2 s.
- Low Power Characteristics – Typical active read current 9 mA, typical program/erase current 20 mA, and standby/automatic sleep current < 1 µA.
- Flexible Sector Architecture – Multiple sector sizes (one 16 KB, two 8 KB, one 32 KB and fifteen 64 KB in byte mode) allowing targeted sector erase and updates.
- Sector Protection and Security – Hardware locking of sectors, temporary sector group unprotect facility and a secured silicon sector (128 words) that can be permanently protected.
- Endurance and Retention – Minimum 100K program/erase cycles per sector and 20-year data retention.
- Interface and Command Compatibility – Parallel memory interface with separate CE#, OE# and WE# controls and support for JEDEC standard program/erase commands and Common Flash Interface (CFI).
- Package and Environmental Ratings – 48-ball TFBGA (6 × 8 mm) surface-mount package rated for industrial temperature range (−40 °C to 85 °C).
Typical Applications
- Industrial Embedded Controllers – Reliable non-volatile storage for firmware and boot code in control and automation equipment across industrial temperature ranges.
- High-Performance Microprocessor Systems – Parallel NOR interface and 70 ns access support systems that require low-latency code execution without added wait states.
- Firmware and Boot Storage – Top Boot sector arrangement and secured silicon sector for protected boot code and permanent storage of critical routines.
- In-Field Firmware Update Systems – Flexible sector architecture, sector unprotect capability and erase suspend/resume support enable targeted updates with minimal system disruption.
Unique Advantages
- Single 3.0 V Supply Simplifies Design – Operation from 2.7 V to 3.6 V reduces the need for additional power rails in embedded systems.
- Fast, Deterministic Read Access – 70 ns access time helps maintain system performance and reduces the need for external wait-state logic.
- Targeted Sector Management – Multiple sector sizes and hardware locking allow precise control for updates and protection of critical code regions.
- Low Standby Current – Sub-µA standby current supports power-sensitive systems and long-term field deployments.
- Compact, Surface-Mount Package – 48-ball TFBGA (6 × 8 mm) enables high-density PCB designs while retaining robust industrial performance.
- Proven Longevity – 100K program/erase cycles and 20-year data retention support long lifecycle and maintenance planning.
Why Choose EN29LV800DT-70BIP2A?
The EN29LV800DT-70BIP2A combines high-speed NOR Flash read performance with sector-level flexibility and industrial-grade reliability. Its single 3.0 V supply, low standby current and compact TFBGA packaging make it suitable for embedded designers who need durable code storage and in-field update capability without extra power-rail complexity.
This part is well suited for customers designing industrial or high-performance embedded systems that require robust non-volatile memory with explicit sector protection, secured boot storage options and JEDEC-standard command compatibility. The device’s endurance and retention characteristics support long-term deployments and firmware lifecycle management.
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