EN29LV800DT-70BIP2A

8Mb Parallel NOR Flash Ind.
Part Description

8Mbit Parallel NOR Flash, 3.0V, 70ns, Top Boot, TFBGA-48, Industrial

Quantity 1,040 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package48-TFBGA (6x8mm)Memory FormatFLASHTechnologyNOR Flash
Memory Size8 MbitAccess Time70 nsGradeIndustrial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page8 µsPackaging48-TFBGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization1M x 8 / 512K x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.71

Overview of EN29LV800DT-70BIP2A – 8Mbit Parallel NOR Flash, 3.0V, 70ns, Top Boot, TFBGA-48, Industrial

The EN29LV800DT-70BIP2A is an 8 Mbit NOR Flash memory device (1,024K × 8 / 512K × 16) in a 48-ball TFBGA (6 × 8 mm) package, designed for industrial embedded systems. It implements a parallel NOR architecture with Top Boot sector organization and operates from a single 3.0 V supply, delivering fast access for code and firmware storage.

With 70 ns access time, sector-based erase/program capability and industrial temperature range, this device is targeted at applications that require reliable non-volatile code storage, in-field updates and robust operation across −40 °C to 85 °C.

Key Features

  • Memory Organization – 8.389 Mbit organized as 1M × 8 or 512K × 16 for flexible data and code storage configurations.
  • Fast Read Performance – 70 ns access time to help eliminate wait states in high-performance microprocessor systems.
  • 3.0 V Single-Supply Operation – Operates from 2.7 V to 3.6 V to minimize system power-rail complexity.
  • High Program/Erase Performance – Typical byte/word program time 8 µs; typical sector erase 100 ms; typical chip erase 2 s.
  • Low Power Characteristics – Typical active read current 9 mA, typical program/erase current 20 mA, and standby/automatic sleep current < 1 µA.
  • Flexible Sector Architecture – Multiple sector sizes (one 16 KB, two 8 KB, one 32 KB and fifteen 64 KB in byte mode) allowing targeted sector erase and updates.
  • Sector Protection and Security – Hardware locking of sectors, temporary sector group unprotect facility and a secured silicon sector (128 words) that can be permanently protected.
  • Endurance and Retention – Minimum 100K program/erase cycles per sector and 20-year data retention.
  • Interface and Command Compatibility – Parallel memory interface with separate CE#, OE# and WE# controls and support for JEDEC standard program/erase commands and Common Flash Interface (CFI).
  • Package and Environmental Ratings – 48-ball TFBGA (6 × 8 mm) surface-mount package rated for industrial temperature range (−40 °C to 85 °C).

Typical Applications

  • Industrial Embedded Controllers – Reliable non-volatile storage for firmware and boot code in control and automation equipment across industrial temperature ranges.
  • High-Performance Microprocessor Systems – Parallel NOR interface and 70 ns access support systems that require low-latency code execution without added wait states.
  • Firmware and Boot Storage – Top Boot sector arrangement and secured silicon sector for protected boot code and permanent storage of critical routines.
  • In-Field Firmware Update Systems – Flexible sector architecture, sector unprotect capability and erase suspend/resume support enable targeted updates with minimal system disruption.

Unique Advantages

  • Single 3.0 V Supply Simplifies Design – Operation from 2.7 V to 3.6 V reduces the need for additional power rails in embedded systems.
  • Fast, Deterministic Read Access – 70 ns access time helps maintain system performance and reduces the need for external wait-state logic.
  • Targeted Sector Management – Multiple sector sizes and hardware locking allow precise control for updates and protection of critical code regions.
  • Low Standby Current – Sub-µA standby current supports power-sensitive systems and long-term field deployments.
  • Compact, Surface-Mount Package – 48-ball TFBGA (6 × 8 mm) enables high-density PCB designs while retaining robust industrial performance.
  • Proven Longevity – 100K program/erase cycles and 20-year data retention support long lifecycle and maintenance planning.

Why Choose EN29LV800DT-70BIP2A?

The EN29LV800DT-70BIP2A combines high-speed NOR Flash read performance with sector-level flexibility and industrial-grade reliability. Its single 3.0 V supply, low standby current and compact TFBGA packaging make it suitable for embedded designers who need durable code storage and in-field update capability without extra power-rail complexity.

This part is well suited for customers designing industrial or high-performance embedded systems that require robust non-volatile memory with explicit sector protection, secured boot storage options and JEDEC-standard command compatibility. The device’s endurance and retention characteristics support long-term deployments and firmware lifecycle management.

Request a quote or submit an inquiry to receive pricing and availability information for EN29LV800DT-70BIP2A.

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