EN29LV800DB-70BIP2A
| Part Description |
8Mbit (1024K × 8 / 512K × 16) Parallel NOR Flash, 3.0V, 70ns, Bottom Boot, TFBGA-48 6×8mm, Industrial |
|---|---|
| Quantity | 1,250 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 48-TFBGA (6x8mm) | Memory Format | FLASH | Technology | NOR Flash | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 8 Mbit | Access Time | 70 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 8 µs | Packaging | 48-TFBGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 1M x 8 / 512K x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of EN29LV800DB-70BIP2A – 8Mbit (1024K × 8 / 512K × 16) Parallel NOR Flash, 3.0V, 70ns, Bottom Boot, TFBGA-48 6×8mm, Industrial
The EN29LV800DB-70BIP2A is an 8.389 Mbit non-volatile NOR flash memory organized as 1M × 8 or 512K × 16 with a parallel interface and single 3.0 V operation (2.7 V–3.6 V). Designed for industrial-grade embedded systems, it provides fast 70 ns access times and bottom-boot capability for reliable boot-code storage and in-field firmware updates.
With a flexible sector architecture, JEDEC-standard command support, and package options including a 48-ball TFBGA (6×8 mm), this device targets systems that require predictable read performance, sector-level protection, and long-term data retention in industrial temperature ranges.
Key Features
- Core / Memory Organization 8.389 Mbit organized as 1,048,576 bytes (1M × 8) or 524,288 words (512K × 16), providing byte and word access modes.
- Performance Access times as fast as 70 ns to minimize wait states in high-performance microprocessor systems; byte/word program time typically 8 μs.
- Power Single 3.0 V supply operation (2.7 V–3.6 V) with typical active read current of 9 mA, typical program/erase current of 20 mA, and standby/automatic sleep current < 1 μA.
- Flexible Sector Architecture Multiple sector sizes (including 16 KB, 8 KB, 32 KB and 64 KB sectors in byte mode) allowing targeted program/erase operations and efficient use of flash space.
- Protection & Security Hardware sector locking and temporary Sector Group Unprotect for controlled code updates; a secured silicon sector provides a 128-word area that can be permanently protected.
- Erase & Program Features High-performance program/erase: sector erase typically 100 ms, chip erase typically 2 s. Supports single-sector erase, chip erase, erase suspend/resume, and JEDEC DATA# polling/toggle-bit status checks.
- Standards & Compatibility JEDEC standard program/erase commands and support for JEDEC Common Flash Interface (CFI) for easier system integration.
- Package & Temperature Surface-mount 48-ball TFBGA (6×8 mm) package with industrial operating temperature range of −40 °C to 85 °C.
Typical Applications
- System Boot Storage — Bottom-boot configuration and a secured silicon sector make this device suitable for storing protected boot code and system firmware.
- High-Performance Embedded Systems — 70 ns access time supports designs that require fast, deterministic reads with minimal wait states.
- Field Upgradeable Firmware — Sector-level protection, temporary unprotect modes, and erase suspend/resume allow controlled in-field updates and partial reprogramming.
- Industrial Control & Automation — Industrial grade temperature range (−40 °C to 85 °C) and robust program/erase endurance support long-term deployment in industrial environments.
Unique Advantages
- Fast Parallel Read Access: 70 ns access time reduces CPU wait states and improves system responsiveness for boot and code fetch operations.
- Flexible, Sector-Level Control: Multiple sector sizes and hardware locking allow precise control for partial updates and code protection, reducing erase/program overhead.
- Protected Boot Area: Secured silicon sector (128 words) can be permanently protected to safeguard critical code or data.
- Low-Power Standby: Standby/automatic sleep current under 1 μA helps minimize power draw when the device is idle.
- Proven Program/Erase Performance: Typical program time 8 μs and sector erase ~100 ms enable fast firmware updates and development cycles.
- Industrial Ruggedness: Industrial temperature rating and TFBGA surface-mount packaging support reliable operation in demanding environments.
Why Choose EN29LV800DB-70BIP2A?
The EN29LV800DB-70BIP2A combines fast parallel NOR read performance with flexible sector architecture and built-in protection features tailored for industrial embedded systems. Its single 3.0 V supply, JEDEC-standard command set, and CFI support make it straightforward to integrate into designs that require reliable boot storage, field upgrades, and deterministic code execution.
This part is well suited to engineers and procurement teams seeking an industrial-grade flash memory with documented endurance (minimum 100K program/erase cycles), long data retention (20 years), and compact 48-ball TFBGA packaging for space-constrained PCB designs.
Request a quote or submit a product inquiry for EN29LV800DB-70BIP2A to get pricing, availability, and ordering details.
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