EN35QY512A (2S)

The EN35QY512A (2S) is a 536.9 Mbit non-volatile memory device based on SPI NOR Flash technology. It is organized as 64M × 8 and is supplied in a WSON surface-mount package designed for temperature-critical applications.

With automotive-grade qualification (AEC-Q100), a wide operating temperature range and a 2.5 V supply, this device is positioned for embedded and automotive applications that require reliable non-volatile storage and defined timing characteristics.

Key Features

• Memory 536.9 Mbit capacity organized as 64M × 8 providing a large non-volatile storage footprint.
• Technology SPI NOR Flash technology; memory type listed as Non-Volatile. Memory format value provided as DRAM in specifications.
• Performance Access time of 8 ns and a clock frequency of 133 MHz for predictable read timing; write cycle time (word/page) is 500 µs.
• Interface & Organization Memory organization 64M × 8 with a Parallel memory interface as specified.
• Power Single supply voltage of 2.5 V as specified for system integration and power budgeting.
• Package & Mounting WSON package in a surface-mount form factor for compact PCB implementations.
• Temperature & Qualification Operating temperature range −40°C to 105°C and AEC-Q100 qualification, supporting automotive-grade deployment.
• Compliance RoHS compliant for environmental and manufacturing requirements.

Typical Applications

• Automotive Systems — Non-volatile storage for automotive modules where AEC-Q100 qualification and −40°C to 105°C operation are required.
• Embedded Control — Firmware and configuration storage in embedded controllers that need a 2.5 V SPI NOR flash solution with defined access timing.
• Industrial Equipment — Persistent data storage in industrial environments benefiting from the wide temperature range and surface-mount WSON package.

Unique Advantages

• Large non-volatile capacity: 536.9 Mbit organized as 64M × 8 enables substantial code and data storage in a single device.
• Automotive-grade qualification: AEC-Q100 qualification supports deployment in automotive applications that require component-level automotive qualification.
• Wide operating range: −40°C to 105°C operation suits temperature-sensitive and harsh-environment applications.
• Compact surface-mount package: WSON package allows space-efficient PCB layout and automated assembly.
• Deterministic timing: 8 ns access time, 133 MHz clock frequency, and 500 µs write cycle time provide clear, verifiable performance parameters for system timing budgets.
• Regulatory compliance: RoHS compliance aligns with environmental manufacturing requirements.

Why Choose EN35QY512A (2S)?

The EN35QY512A (2S) combines a substantial 536.9 Mbit non-volatile memory capacity with automotive-grade qualification (AEC-Q100), a broad −40°C to 105°C operating range, and a compact WSON surface-mount package. Its defined access and write timings, along with a 2.5 V supply requirement, make it suitable for designers who need verifiable performance and integration parameters.

This device is well suited for designers of embedded, industrial and automotive systems seeking reliable non-volatile storage that meets automotive qualification and environmental requirements while simplifying board-level integration.

Request a quote or submit an inquiry to evaluate EN35QY512A (2S) for your next design and obtain pricing and availability details.