EN35SXR256A-104YIP(2PC)
| Part Description |
256 Mbit SPI NOR Flash, Industrial 8‑pin WSON |
|---|---|
| Quantity | 611 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 8-pin WSON 8x6mm | Memory Format | DRAM | Technology | SPI NOR Flash | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Mbit | Access Time | 8 ns | Grade | Industrial | ||
| Clock Frequency | 104 MHz | Voltage | 2.5V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 500 µs | Packaging | 8-pin WSON 8x6mm | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 32M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of EN35SXR256A-104YIP(2PC) – 256 Mbit SPI NOR Flash, Industrial 8‑pin WSON
The EN35SXR256A-104YIP(2PC) from ESMT is a 256 Mbit serial SPI NOR Flash memory device designed for industrial applications requiring high-density non-volatile storage with flexible read/program/erase control. Built on a serial interface architecture, it supports Standard, Dual and Quad SPI I/O with high-speed fast-read modes for code and data storage.
This device is well suited for systems that need granular sector/block erase and reliable in-field updates—offering fast page program times, individual sector erase capability, and hardware/software protection mechanisms to simplify firmware and data management.
Key Features
- Memory Capacity and Organization — 256 Mbit total capacity (32M × 8) organized as 131,072 pages of 256 bytes, with 8,192 × 4KB uniform sectors for fine-grain erase and update.
- Serial SPI Interface — Supports Standard, Dual and Quad SPI modes; SPI compatible (Mode 0 and Mode 3) for straightforward integration with common SPI controllers.
- High-Speed Read Performance — 104 MHz clock rate for Single/Dual/Quad I/O Fast Read and up to 133 MHz for Quad I/O Fast Read, enabling accelerated code fetch and data transfer.
- Program/Erase Performance — Typical page program time 0.5 ms; sector erase typically 40 ms with additional half-block, block and full chip erase options for flexible memory maintenance.
- Low Power — Typical active current around 12 mA and typical power-down current about 1 µA to reduce power draw in standby modes.
- Voltage Range — Single power-supply operation with full voltage range 1.65–1.95 V and regulated operation specified at 1.8–1.95 V.
- Security and Protection — Software and hardware write protection, WP# pin support, lockable 3 × 512‑byte OTP security sector, Read Unique ID and replay-protected monotonic counter (RPMC).
- Endurance and Retention — Minimum 100K program/erase cycles per sector and data retention of 20 years for long-term reliability.
- Package and Temperature — Available in an 8‑contact WSON (8 × 6 mm) package; industrial temperature range (−40 °C to 85 °C); all Pb‑free packages are RoHS and REACH compliant.
- Standards and Discoverability — Supports Serial Flash Discoverable Parameters (SFDP) for standardized device parameter discovery.
Typical Applications
- Firmware Storage & In‑Field Updates — Suitable for storing executable code with support for page program and individual sector/block erase for patching and firmware revisions.
- Embedded Code and Boot Storage — Fast read modes and Quad I/O support efficient code fetch for system boot and runtime execution.
- Configuration and Parameter Storage — Lockable OTP region and software/hardware protection make the device appropriate for secure configuration and calibration data retention.
- Data Logging and Non‑Volatile Data Segments — Uniform 4KB sectors and high endurance enable segmented data storage where parts of memory are updated independently.
Unique Advantages
- Flexible Read Modes: Standard, Dual and Quad SPI support simplifies tuning for throughput versus pin-count trade-offs in diverse host systems.
- High-Speed Quad Read Option: Up to 133 MHz Quad I/O Fast Read provides accelerated transfer rates for performance-sensitive applications.
- Granular Erase Architecture: 4KB uniform sectors plus 32KB/64KB blocks let designers erase only what’s necessary, reducing cycle wear and speeding updates.
- Robust Protection Features: Combination of WP# pin, software protection and a lockable OTP sector supports secure storage and controlled update flows.
- Industrial Reliability: Qualified for −40 °C to 85 °C operation with long data retention and high endurance, supporting deployed embedded systems over time.
- Low Standby Power: Typical 1 µA power-down current helps minimize energy use in battery-assisted or always-on systems.
Why Choose EN35SXR256A-104YIP(2PC)?
The EN35SXR256A-104YIP(2PC) delivers a balanced combination of capacity, performance and protection tailored for industrial embedded systems that require reliable non-volatile storage. Its support for Standard/Dual/Quad SPI, high-speed fast-read modes, and uniform sector architecture make it a practical choice for firmware, boot code and secure configuration storage.
Designed for long-term deployments, the device offers high endurance, extended data retention and low-power modes—helping reduce maintenance cycles and support robust in-field update strategies. Its WSON 8 × 6 mm package and industrial temperature range ease board-level integration across a wide set of embedded applications.
Request a quote or submit a purchase request to evaluate the EN35SXR256A-104YIP(2PC) for your next design or production program.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A