EN35SXR256A-104YIP(2PC)

256Mb SPI NOR Flash Ind.
Part Description

256 Mbit SPI NOR Flash, Industrial 8‑pin WSON

Quantity 611 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package8-pin WSON 8x6mmMemory FormatDRAMTechnologySPI NOR Flash
Memory Size256 MbitAccess Time8 nsGradeIndustrial
Clock Frequency104 MHzVoltage2.5VMemory TypeNon-Volatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page500 µsPackaging8-pin WSON 8x6mm
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization32M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.71

Overview of EN35SXR256A-104YIP(2PC) – 256 Mbit SPI NOR Flash, Industrial 8‑pin WSON

The EN35SXR256A-104YIP(2PC) from ESMT is a 256 Mbit serial SPI NOR Flash memory device designed for industrial applications requiring high-density non-volatile storage with flexible read/program/erase control. Built on a serial interface architecture, it supports Standard, Dual and Quad SPI I/O with high-speed fast-read modes for code and data storage.

This device is well suited for systems that need granular sector/block erase and reliable in-field updates—offering fast page program times, individual sector erase capability, and hardware/software protection mechanisms to simplify firmware and data management.

Key Features

  • Memory Capacity and Organization — 256 Mbit total capacity (32M × 8) organized as 131,072 pages of 256 bytes, with 8,192 × 4KB uniform sectors for fine-grain erase and update.
  • Serial SPI Interface — Supports Standard, Dual and Quad SPI modes; SPI compatible (Mode 0 and Mode 3) for straightforward integration with common SPI controllers.
  • High-Speed Read Performance — 104 MHz clock rate for Single/Dual/Quad I/O Fast Read and up to 133 MHz for Quad I/O Fast Read, enabling accelerated code fetch and data transfer.
  • Program/Erase Performance — Typical page program time 0.5 ms; sector erase typically 40 ms with additional half-block, block and full chip erase options for flexible memory maintenance.
  • Low Power — Typical active current around 12 mA and typical power-down current about 1 µA to reduce power draw in standby modes.
  • Voltage Range — Single power-supply operation with full voltage range 1.65–1.95 V and regulated operation specified at 1.8–1.95 V.
  • Security and Protection — Software and hardware write protection, WP# pin support, lockable 3 × 512‑byte OTP security sector, Read Unique ID and replay-protected monotonic counter (RPMC).
  • Endurance and Retention — Minimum 100K program/erase cycles per sector and data retention of 20 years for long-term reliability.
  • Package and Temperature — Available in an 8‑contact WSON (8 × 6 mm) package; industrial temperature range (−40 °C to 85 °C); all Pb‑free packages are RoHS and REACH compliant.
  • Standards and Discoverability — Supports Serial Flash Discoverable Parameters (SFDP) for standardized device parameter discovery.

Typical Applications

  • Firmware Storage & In‑Field Updates — Suitable for storing executable code with support for page program and individual sector/block erase for patching and firmware revisions.
  • Embedded Code and Boot Storage — Fast read modes and Quad I/O support efficient code fetch for system boot and runtime execution.
  • Configuration and Parameter Storage — Lockable OTP region and software/hardware protection make the device appropriate for secure configuration and calibration data retention.
  • Data Logging and Non‑Volatile Data Segments — Uniform 4KB sectors and high endurance enable segmented data storage where parts of memory are updated independently.

Unique Advantages

  • Flexible Read Modes: Standard, Dual and Quad SPI support simplifies tuning for throughput versus pin-count trade-offs in diverse host systems.
  • High-Speed Quad Read Option: Up to 133 MHz Quad I/O Fast Read provides accelerated transfer rates for performance-sensitive applications.
  • Granular Erase Architecture: 4KB uniform sectors plus 32KB/64KB blocks let designers erase only what’s necessary, reducing cycle wear and speeding updates.
  • Robust Protection Features: Combination of WP# pin, software protection and a lockable OTP sector supports secure storage and controlled update flows.
  • Industrial Reliability: Qualified for −40 °C to 85 °C operation with long data retention and high endurance, supporting deployed embedded systems over time.
  • Low Standby Power: Typical 1 µA power-down current helps minimize energy use in battery-assisted or always-on systems.

Why Choose EN35SXR256A-104YIP(2PC)?

The EN35SXR256A-104YIP(2PC) delivers a balanced combination of capacity, performance and protection tailored for industrial embedded systems that require reliable non-volatile storage. Its support for Standard/Dual/Quad SPI, high-speed fast-read modes, and uniform sector architecture make it a practical choice for firmware, boot code and secure configuration storage.

Designed for long-term deployments, the device offers high endurance, extended data retention and low-power modes—helping reduce maintenance cycles and support robust in-field update strategies. Its WSON 8 × 6 mm package and industrial temperature range ease board-level integration across a wide set of embedded applications.

Request a quote or submit a purchase request to evaluate the EN35SXR256A-104YIP(2PC) for your next design or production program.

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