EN35SY512A-104YIP(2PC)
| Part Description |
512 Mbit SPI NOR Flash Memory (Industrial, 8-pin WSON) |
|---|---|
| Quantity | 1,762 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 8-pin WSON 8x6mm | Memory Format | DRAM | Technology | SPI NOR Flash | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 8 ns | Grade | Industrial | ||
| Clock Frequency | 104 MHz | Voltage | 2.5V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 500 µs | Packaging | 8-pin WSON 8x6mm | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of EN35SY512A-104YIP(2PC) – 512 Mbit SPI NOR Flash Memory (Industrial, 8-pin WSON)
The EN35SY512A-104YIP(2PC) is a 512 Mbit serial SPI NOR Flash memory device designed for industrial temperature operation. It implements a serial interface architecture with Single/Dual/Quad I/O support and is optimized for non-volatile code and data storage in embedded systems that require uniform sector erase and reliable program/erase cycling.
Key value comes from its high-density 512 M-bit capacity, flexible SPI modes, hardware/software write protection options, and industry-grade operating range, delivering a compact, low-power memory solution in an 8-pin WSON 8×6 mm package.
Key Features
- Memory Capacity & Organization — 512 M-bit density (65,536 KByte) organized as 262,144 pages with 256 bytes per programmable page; uniform sector architecture with 16,384 × 4-Kbyte sectors.
- Serial SPI Interface — SPI-compatible Serial Interface with Standard, Dual and Quad SPI support (CLK, CS#, DI, DO, DQ₀–DQ₃); supports 3-byte and 4-byte address modes and Serial Flash Discoverable Parameters (SFDP).
- High-Speed Read Options — 104 MHz clock rate for Single/Dual/Quad I/O Fast Read and 133 MHz for Quad I/O Fast Read for accelerated data throughput.
- Program & Erase Performance — Typical page program time 0.5 ms; typical sector erase 40 ms; half-block and block erase times and chip erase timing provided for scalable memory maintenance.
- Endurance & Data Retention — Minimum 100K program/erase cycles per sector/block and 20 years data retention as specified for long-term storage reliability.
- Power & Low-Power Modes — Single power supply operation across full voltage range 1.65–1.95 V with low active and standby currents (typical active current ~14 mA, typical power-down ~2 μA).
- Write Protection & Security — Software and hardware write protection features, lockable 3 × 512-byte OTP security sector, default Quad Enable (QE=1) with WP# and HOLD# disable options.
- Package & Temperature — Industrial temperature range (−40°C to 85°C) and available in an 8-contact WSON 8×6 mm surface-mount package.
- Reliability & Identification — Read Unique ID Number support and industry-standard protection and discovery features to assist system integration and validation.
Typical Applications
- Industrial Embedded Systems — Non-volatile storage for firmware and configuration in controllers and industrial equipment operating across −40°C to 85°C.
- Communications & Networking Equipment — High-density serial flash for boot code and parameter storage where SPI interface and uniform sectors simplify field updates.
- Consumer & IoT Devices (Industrial-grade) — Compact 8-pin WSON packaging and low power modes for space-constrained devices requiring reliable code and data retention.
Unique Advantages
- Large, Uniform Capacity: 512 M-bit with 4-Kbyte uniform sectors enables fine-grained erase and update operations without wasting space.
- Flexible SPI Modes: Standard, Dual and Quad SPI compatibility lets system designers scale throughput without changing the memory family.
- Industrial Temperature Range: Specified −40°C to 85°C operation supports deployment in harsher environments and extended-temperature applications.
- Low-Power Standby: Typical 2 μA power-down current helps reduce system power in standby or battery-powered applications.
- Proven Endurance & Retention: Minimum 100K program/erase cycles and 20-year data retention support long-term field updates and archival storage.
- Compact Surface-Mount Package: 8-pin WSON 8×6 mm simplifies board-level integration in space-constrained designs.
Why Choose EN35SY512A-104YIP(2PC)?
The EN35SY512A-104YIP(2PC) positions itself as a robust, industrial-grade serial NOR Flash memory offering a balance of high density, flexible SPI interface modes, and proven program/erase endurance. Its uniform sector architecture and low-power modes make it suitable for embedded systems that require reliable firmware storage, field updates, and long-term data retention.
Engineers specifying this device benefit from a compact 8-pin WSON package, industrial temperature support, and SPI features that simplify integration into existing system architectures while maintaining predictable performance and endurance over the product lifecycle.
Request a quote or submit an inquiry to receive pricing, lead-time and availability details for EN35SY512A-104YIP(2PC).
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
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