EN35SY512A-133YIP(2P)

512Mb SPI NOR Flash Ind.
Part Description

512 M-bit 1.8V SPI NOR Serial Flash (Industrial)

Quantity 824 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package8-pin WSON 8x6mmMemory FormatDRAMTechnologySPI NOR Flash
Memory Size512 MbitAccess Time8 nsGradeIndustrial
Clock Frequency133 MHzVoltage2.5VMemory TypeNon-Volatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page500 µsPackaging8-pin WSON 8x6mm
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization64M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.71

Overview of EN35SY512A-133YIP(2P) – 512 M-bit 1.8V SPI NOR Serial Flash (Industrial)

The EN35SY512A-133YIP(2P) from ESMT is a 512 M-bit serial NOR Flash memory device designed for robust code and data storage in industrial embedded systems. Built on a SPI serial architecture with support for single, dual and quad I/O, the device delivers high-speed Quad I/O Fast Read at up to 133 MHz and advanced sector-level management for flexible firmware and data updates.

With uniform 4‑Kbyte sectors, hardware and software protection options, and industrial temperature range operation, this device is targeted at applications that require reliable non-volatile storage, fast read performance and long data retention.

Key Features

  • Memory Capacity & Organization — 512 M-bit (65,536 KByte) capacity organized as 64M × 8 with 262,144 pages and 256 bytes per programmable page.
  • Serial Flash Architecture — SPI serial interface supporting Standard, Dual and Quad SPI modes with SPI Mode 0 and Mode 3 compatibility.
  • High-Speed Read — Fast Read support up to 104 MHz for Single/Dual I/O and up to 133 MHz for Quad I/O Fast Read.
  • Uniform Sector Architecture — 16,384 uniform 4‑Kbyte sectors; also organized as 2,048 blocks of 32‑Kbyte and 1,024 blocks of 64‑Kbyte for flexible erase granularity.
  • Program & Erase Performance — Typical page program time: 0.5 ms; typical sector erase: 40 ms; half-block erase: 200 ms; block erase: 300 ms; chip erase: 120 seconds typical.
  • Power — Single power supply operation with full voltage range 1.65–1.95 V; low power profile with typical active current 14 mA and typical power-down current 2 µA.
  • Reliability & Security — Minimum 100K program/erase cycle endurance per sector and 20‑year data retention. Lockable 3 × 512‑byte OTP security sector and Read Unique ID support.
  • Addressing & Compatibility — Supports 3‑byte and 4‑byte address modes and Serial Flash Discoverable Parameters (SFDP) signature for system compatibility.
  • Package & Temperature — Industrial temperature range −40 °C to 85 °C; available in 8-contact WSON (8 × 6 mm) package suitable for surface-mount applications.
  • Write Protection — Software and hardware write protection: global or partial protection via software and WP# pin enable/disable.

Typical Applications

  • Industrial Control & Automation — Reliable firmware and configuration storage for controllers and PLCs that operate across −40 °C to 85 °C.
  • Embedded Firmware Storage — Primary code storage and in-field firmware updates using uniform sectors and flexible erase/program granularity.
  • IoT & Edge Devices — Non-volatile storage for boot code, system images and small data logs where low power standby and fast read performance matter.
  • Secure ID & Configuration — Store device-unique IDs and small secure parameters using the lockable OTP sectors and Read Unique ID feature.

Unique Advantages

  • High-capacity serial storage: 512 M-bit capacity provides ample non-volatile space for large firmware images and multiple application partitions.
  • Flexible SPI I/O modes: Support for Standard, Dual and Quad SPI plus Mode 0/3 operation enables designers to trade off pin usage and throughput.
  • Uniform 4 KB sectors: Fine-grained erase control reduces unnecessary erase/program cycles and simplifies firmware update strategies.
  • Low-power standby: Typical 2 µA power-down current helps minimize energy consumption in battery-assisted or always-on systems.
  • Industrial-grade operation: −40 °C to 85 °C rating and robust endurance (≥100K cycles) make the device suitable for demanding environments.
  • Hardware and software protection: WP# pin and software protection combine to let systems selectively safeguard critical code and data regions.

Why Choose EN35SY512A-133YIP(2P)?

The EN35SY512A-133YIP(2P) delivers a balanced combination of capacity, speed and reliability for embedded designs that require solid non-volatile storage. Its support for multiple SPI I/O modes and high-speed Quad I/O Fast Read at 133 MHz enables system designers to optimize boot and code fetch performance while maintaining a compact pin count.

With uniform sector architecture, strong endurance and long data retention, this ESMT serial flash device is well suited for industrial firmware storage, secure ID storage and edge applications that demand predictable program/erase behavior and low-power standby. The device's package and temperature rating make it ready for surface-mount integration into production systems.

Request a quote or submit an inquiry for pricing and availability of EN35SY512A-133YIP(2P) to initiate procurement or volume planning.

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