F59D4G81XB-45TG2X

4Gb NAND Flash
Part Description

SLC NAND Flash, 4Gbit, 1.8V, ×8, 45ns, 48‑pin TSOPI

Quantity 1,790 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageTSOPI-48Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size4 GbitAccess Time25 nsGradeCommercial
Clock FrequencyN/AVoltage1.7V ~ 1.95VMemory TypeNon-Volatile
Operating Temperature0°C – 70°CWrite Cycle Time Word Page200 µsPackaging48-TSOPI
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization512M x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.71

Overview of F59D4G81XB-45TG2X – SLC NAND Flash, 4Gbit, 1.8V, ×8, 45ns, 48‑pin TSOPI

The F59D4G81XB-45TG2X is a 4 Gbit single-level cell (SLC) NAND Flash memory organized as 512M × 8 and designed for 1.8 V systems (1.7 V–1.95 V). It implements an ONFI 1.0-compliant asynchronous parallel I/O interface, delivering high-performance I/O for systems that require reliable non‑volatile storage.

With SLC technology, JESD47G-compliant data retention and 100,000 program/erase cycle endurance, this device is targeted at commercial-grade applications that need durable storage, predictable program/read/erase performance, and a compact TSOPI package for surface-mount board designs.

Key Features

  • Memory Architecture — 4 Gbit capacity (512M × 8 / 4.295 Gbit) with a page size of 4,352 bytes (4,096 + 256) and a block size of 64 pages, providing standard NAND organization for block/page operations.
  • Single-Level Cell (SLC) Technology — SLC NAND offering 100,000 program/erase cycles and JESD47G-compliant data retention, with uncycled data retention specified at 10 years (24/7 @ 70°C).
  • Performance — Asynchronous I/O with 25 ns access time and device ordering at 45 ns timing; read, program and erase timing examples include read page up to 170 μs (with on-die ECC enabled), program page typical 200 μs (ECC disabled), and erase block typical 2 ms.
  • Interface & Command Set — ONFI 1.0-compliant parallel interface using an 8-bit I/O bus and standard asynchronous control signals (CE#, CLE, ALE, WE#, RE#). Supports advanced command features, program/read cache modes and ONFI protocol commands.
  • Data Integrity & Control — 8-bit internal ECC available (disabled by default and toggled via SET FEATURE); on-die ECC state of Block 0 is valid when shipped from factory. Operation status byte and R/B# signal provide software and hardware methods for detecting operation completion.
  • Security & Flexibility — Permanent block locking (blocks 47:0), one-time programmable (OTP) mode, block lock functionality, and programmable drive strength.
  • Power & Temperature — Low-voltage operation at 1.8 V nominal (range 1.7 V–1.95 V) and commercial operating temperature range of 0 °C to 70 °C.
  • Package & Mounting — Surface-mount TSOPI-48 package (12 mm × 20 mm body, 0.5 mm pin pitch) for compact board-level integration; supplier device package: 48‑TSOPI.
  • Compliance — RoHS compliant for lead-free manufacturing processes.

Typical Applications

  • Embedded storage systems — Use as program and data storage in systems that require durable, non‑volatile memory with predictable P/E cycle characteristics.
  • High-performance I/O devices — Suited for designs that leverage asynchronous parallel I/O and ONFI protocol support to achieve responsive read/write operations.
  • Firmware and code storage — Compact TSOPI package and block/page architecture make it appropriate for storing firmware and boot code in commercial equipment.
  • Data logging and retention applications — SLC endurance and JESD47G-compliant retention (including 10-year uncycled retention at 70 °C) support long-term data preservation needs.

Unique Advantages

  • SLC endurance and long retention — 100,000 program/erase cycles and JESD47G-compliant data retention provide predictable longevity for write-intensive applications.
  • Flexible ECC control — 8-bit internal ECC can be enabled or disabled via SET FEATURE, allowing designers to balance performance and error management as required.
  • ONFI-compliant parallel interface — Standard ONFI 1.0 support and a highly multiplexed 8-bit bus reduce pin count while maintaining compatibility with standard controller designs.
  • Compact, surface-mount footprint — TSOPI-48 (12 mm × 20 mm) package enables dense board layouts without sacrificing access to essential control and status signals (R/B#, WP#).
  • Low-voltage operation — 1.7 V–1.95 V supply range supports 1.8 V system designs and helps minimize platform power requirements.
  • Scalable board-level upgrade path — Common pinout and standard interface simplify migration to higher densities without board redesign.

Why Choose F59D4G81XB-45TG2X?

The F59D4G81XB-45TG2X delivers the durability and data retention characteristics expected from SLC NAND combined with ONFI-compliant asynchronous performance for commercial-grade designs. Its programmable ECC, comprehensive command set, and hardware status signals provide designers precise control over error management and operation monitoring.

With a compact TSOPI-48 surface-mount package, low-voltage operation, and clear performance/latency figures, this device is well suited for embedded storage, firmware retention, and high-performance I/O applications that require predictable endurance and long-term data preservation.

Request a quote or submit an inquiry to purchase F59D4G81XB-45TG2X for your next design requirement.

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