F59L8G81KSA-25BIAG2R

The F59L8G81KSA-25BIAG2R is an 8.59 Gbit single-level cell (SLC) NAND flash memory organized as 512M × 8 × 2 die and built for demanding embedded and automotive applications. It provides a parallel x8 interface, 3.3 V operation (2.7 V–3.6 V), and a compact 63-ball BGA package suited for space-constrained board designs.

Designed for high-reliability storage, the device integrates features such as automatic program/erase operations, cache program/read, and hardware data protection, making it appropriate for automotive, industrial and consumer systems that require robust non-volatile storage.

Key Features

• Memory Core 8.59 Gbit SLC NAND organized as 512M × 8 × 2 die (stacked by two 4 Gb chips), with a 4K+256 B page and 64-page (256K+16K B) block structure.
• Performance Access time specified at 20 ns and read cycle listed at 25 ns; random read latency up to 25 μs (max.). Page program times typically 400 μs (max. 700 μs); block erase typically 3.5 ms (max. 10 ms).
• Endurance & Retention SLC technology with endurance rated at 60K program/erase cycles and uncycled data retention of 10 years at 55°C. ECC requirement: 8-bit per 512 bytes.
• Power & Interface Single-supply operation from 2.7 V to 3.6 V and a parallel, multiplexed command/address/data DQ port supporting standard NAND command operation and EDO mode.
• System Reliability Hardware data protection, program/erase lockout during power transitions, automatic page 0 read at power-up option, and compliance to JESD47K specifications.
• Package & Temperature Surface-mount 63-ball BGA (BGA-63) package. Product specifications list an operating temperature range of −40 °C to 105 °C.

Typical Applications

• Automotive systems — Automotive-grade AEC-Q100 qualification supports use in infotainment, telematics and other in-vehicle storage functions.
• Solid-state file storage — High-density SLC NAND for robust file and firmware storage in embedded devices.
• Imaging and voice recorders — Page- and block-level operations suit camera image buffers, voice recorders and media storage.
• Industrial control and instrumentation — Wide supply range and extended operating temperature support reliable non-volatile storage in industrial environments.

Unique Advantages

• AEC-Q100 Automotive Qualification: Provides confidence for deployment in automotive applications that require component-level qualification.
• SLC Endurance and Retention: 60K program/erase cycles and 10-year retention at 55°C deliver long service life for critical data storage.
• Stacked Die Organization: Two 4 Gb dice stacked into an 8 Gb device enable the device’s internal architecture for page, block and cache operations.
• Comprehensive On-Chip Features: Automatic program/erase, cache program/read, copy-back and boot-from-NAND options simplify system boot and memory management.
• Robust Power Window: 2.7 V–3.6 V supply range supports standard 3.3 V systems while providing tolerance for supply variation.
• Compact BGA Package: 63-ball BGA (surface mount) reduces board footprint and supports high-density PCB layouts.

Why Choose F59L8G81KSA-25BIAG2R?

The F59L8G81KSA-25BIAG2R positions itself as a durable, automotive-grade SLC NAND solution combining high endurance, long data retention and on-chip features that simplify system-level flash management. Its stacked 4 Gb die organization, ECC requirement specification, and broad operating conditions make it suitable for embedded designs that need reliable non-volatile storage across lifecycle and temperature stress.

This device is well suited for engineers and procurement teams designing automotive, industrial or consumer systems that require proven SLC performance, compact packaging and clear, verifiable specifications for endurance, timing and interface behavior.

Request a quote or submit an inquiry to obtain pricing, lead-time and sample availability for the F59L8G81KSA-25BIAG2R.