IS42S16400J-7B2LI

IC DRAM 64MBIT PAR 60TFBGA
Part Description

IC DRAM 64MBIT PAR 60TFBGA

Quantity 137 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package60-TFBGA (6.4x10.1)Memory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS42S16400J-7B2LI – IC DRAM 64MBIT PAR 60TFBGA

The IS42S16400J-7B2LI from ISSI is a 64 Mbit volatile SDRAM device organized as 4M × 16 with a parallel memory interface. It delivers high-speed DRAM storage with a specified clock frequency of 143 MHz and an access time of 5.4 ns.

Packaged in a compact 60-TFBGA (6.4×10.1 mm) and operating from 3.0 V to 3.6 V across an ambient range of -40°C to 85°C, this part is intended for systems requiring board-mounted parallel SDRAM in space-constrained designs.

Key Features

  • Memory Core 64 Mbit SDRAM organized as 4M × 16; memory format is DRAM providing volatile storage for runtime data and buffering.
  • Performance Specified clock frequency of 143 MHz with an access time of 5.4 ns to support high-speed data transactions.
  • Interface Parallel memory interface for integration with parallel-memory controllers and system buses.
  • Power Voltage supply range of 3.0 V to 3.6 V compatible with common 3.3 V system rails.
  • Package 60-TFBGA package (6.4×10.1 mm) for compact board-level mounting.
  • Temperature Range Operating ambient temperature from -40°C to 85°C for deployment in varied environmental conditions.

Typical Applications

  • Embedded Systems — Provides board-level volatile memory for application runtime data, buffering, and working storage where a 4M × 16 organization is suitable.
  • Consumer Electronics — Serves as compact parallel SDRAM for devices that require a small BGA footprint and 3.3 V compatibility.
  • Industrial Control — Supports systems operating across -40°C to 85°C that need reliable volatile memory in a compact package.

Unique Advantages

  • Compact BGA Footprint: 60-TFBGA (6.4×10.1 mm) reduces PCB area for space-constrained designs.
  • 3.0–3.6 V Supply Range: Enables straightforward integration with standard 3.3 V system rails.
  • Parallel Interface: Simplifies connection to parallel-memory controllers and existing parallel bus architectures.
  • High-Frequency Operation: 143 MHz clock and 5.4 ns access time support fast data transfers and responsive memory access.
  • Extended Ambient Range: -40°C to 85°C operation supports deployment in a wide range of environmental conditions.

Why Choose IS42S16400J-7B2LI?

The IS42S16400J-7B2LI positions itself as a compact, board-mount parallel SDRAM offering moderate-high speed memory (143 MHz, 5.4 ns access) in a 64 Mbit capacity (4M × 16). Its 60-TFBGA package and 3.0–3.6 V supply range make it suitable for designs that require a small footprint and compatibility with 3.3 V systems.

Manufactured by ISSI, this device is targeted at designers and engineers needing reliable volatile DRAM in applications spanning embedded systems, consumer products, and industrial equipment where extended ambient temperature operation is required.

If you need pricing, lead-time information, or technical clarification for the IS42S16400J-7B2LI, request a quote or contact sales to discuss availability and ordering.

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