IS42S16800J-6BLI-TR
| Part Description |
IC DRAM 128MBIT PAR 54TFBGA |
|---|---|
| Quantity | 1,503 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TFBGA (8x8) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | LVTTL | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | N/A | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS42S16800J-6BLI-TR – IC DRAM 128MBIT PAR 54TFBGA
The IS42S16800J-6BLI-TR is a 128 Mbit volatile SDRAM device manufactured by ISSI, Integrated Silicon Solution Inc. It is organized as 8M × 16 and provides standard SDRAM functionality for designs that require off-chip dynamic memory.
Designed for systems requiring 166 MHz clock operation and LVTTL interface signaling, this device offers a compact 54‑TFBGA (8 × 8) package and a supply voltage range of 3.0 V to 3.6 V with an operating temperature range of −40°C to 85°C (TA).
Key Features
- Memory Core 128 Mbit SDRAM organized as 8M × 16, volatile DRAM storage.
- Performance Supports a clock frequency of 166 MHz with an access time of 5.4 ns for timely data access.
- Interface LVTTL memory interface for integration with compatible system logic.
- Power Supply voltage range of 3.0 V to 3.6 V to match common 3 V system rails.
- Package 54‑TFBGA (8 × 8) supplier device package for compact board-level integration.
- Environmental Range Operating ambient temperature range from −40°C to 85°C (TA).
Typical Applications
- System memory — Provides 128 Mbit SDRAM storage (8M × 16) for designs that require off-chip volatile memory.
- Embedded platforms — Used where a compact 54‑TFBGA footprint and 3.0–3.6 V supply are required.
- High-speed buffering — Suitable for buffering applications leveraging its 166 MHz clock frequency and 5.4 ns access time.
Unique Advantages
- Validated SDRAM architecture — Standard SDRAM organization (8M × 16) simplifies memory mapping and system integration.
- Deterministic access performance — 5.4 ns access time and 166 MHz clock support enable predictable memory latency.
- Wide voltage tolerance — 3.0 V to 3.6 V supply range accommodates common 3 V system rails.
- Compact BGA package — 54‑TFBGA (8 × 8) package reduces PCB area for space-constrained designs.
- Extended operating temperature — −40°C to 85°C (TA) supports a broad range of ambient environments.
Why Choose IC DRAM 128MBIT PAR 54TFBGA?
The IS42S16800J-6BLI-TR combines a 128 Mbit SDRAM organization with 166 MHz clock capability and a compact 54‑TFBGA package, delivering a balanced memory solution for designs that require volatile DRAM with defined performance and electrical characteristics. With a supply voltage range of 3.0–3.6 V and an operating temperature span of −40°C to 85°C, it is suited for applications needing reliable off-chip SDRAM within those electrical and thermal bounds.
Manufactured by ISSI, Integrated Silicon Solution Inc, this device is appropriate for engineering teams specifying a 8M × 16 SDRAM device in a small BGA footprint where the documented clock, access time, interface, and supply requirements align with system constraints.
Request a quote or contact sales for pricing, availability, and lead-time information for IS42S16800J-6BLI-TR.
