IS42S16800J-6BLI

IC DRAM 128MBIT PAR 54TFBGA
Part Description

IC DRAM 128MBIT PAR 54TFBGA

Quantity 990 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package54-TFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS42S16800J-6BLI – IC DRAM 128 Mbit, 54-TFBGA

The IS42S16800J-6BLI is a 128 Mbit SDRAM organized as 8M × 16 in a compact 54-TFBGA (8 × 8) package. It provides synchronous DRAM storage with a specified clock frequency of 166 MHz and an access time of 5.4 ns.

Designed for systems that require mid-density volatile memory in a small footprint, the device supports a LVTTL memory interface and operates from a 3.0 V to 3.6 V supply with an operating temperature range of -40 °C to 85 °C.

Key Features

  • Memory Core 128 Mbit SDRAM organized as 8M × 16 for straightforward parallel memory configurations.
  • Performance Clock frequency up to 166 MHz with an access time of 5.4 ns to support timed synchronous operations.
  • Interface LVTTL memory interface for compatibility with standard TTL logic signaling levels.
  • Power Nominal supply voltage range of 3.0 V to 3.6 V to match common 3V system rails.
  • Package 54-TFBGA (8 × 8) package that provides a compact board footprint for space-constrained designs.
  • Operating Range Rated for operation from -40 °C to 85 °C (TA) to cover a wide ambient temperature window.

Typical Applications

  • Memory Expansion Provides external SDRAM capacity where 128 Mbit storage in a compact package is required.
  • Embedded System Memory Serves as synchronous DRAM for embedded designs that need parallel memory organization and LVTTL interfacing.
  • Compact PCB Designs The 54-TFBGA package supports dense board layouts where board space is limited.

Unique Advantages

  • Mid-density SDRAM in a compact footprint: 128 Mbit capacity in a 54-TFBGA (8 × 8) package reduces board area compared with larger packages.
  • Deterministic synchronous performance: 166 MHz clock rating and 5.4 ns access time support time-sensitive memory operations.
  • Standard LVTTL interface: Compatible with common TTL-level signaling for straightforward integration into existing logic systems.
  • Wide supply tolerance: 3.0 V to 3.6 V operation accommodates variations in 3V system power rails.
  • Extended ambient temperature range: -40 °C to 85 °C operation supports deployment across a broad set of environmental conditions.

Why Choose IC DRAM 128MBIT PAR 54TFBGA?

The IS42S16800J-6BLI delivers a balanced combination of capacity, synchronous performance, and a compact BGA footprint for designs that require reliable mid-density DRAM. Its specified 166 MHz clock frequency, 5.4 ns access time, and LVTTL interface make it suitable for systems needing predictable SDRAM behavior within a 3.0 V–3.6 V power domain.

Sourced from Integrated Silicon Solution Inc. (ISSI), this 128 Mbit SDRAM is appropriate for engineers specifying a compact, temperature-rated memory component for tightly packaged electronic designs.

Request a quote or contact sales to discuss availability, lead times and pricing for the IS42S16800J-6BLI.

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