IS42S16800F-7TLI

IC DRAM 128MBIT PAR 54TSOP II
Part Description

IC DRAM 128MBIT PAR 54TSOP II

Quantity 1,130 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS42S16800F-7TLI – IC DRAM 128MBIT PAR 54TSOP II

The IS42S16800F-7TLI is a 128 Mbit volatile SDRAM organized as 8M × 16 with a parallel memory interface. It provides clocked SDRAM operation with a 143 MHz clock frequency and an access time of 5.4 ns for temporary data storage in systems that require synchronous parallel DRAM.

Packaged in a 54‑TSOP II (0.400", 10.16 mm width) and specified for operation from -40°C to 85°C with a supply range of 3.0 V to 3.6 V, this device suits designs needing mid-density DRAM in a compact surface-mount package.

Key Features

  • Memory Core  SDRAM technology with a total density of 128 Mbit organized as 8M × 16 for parallel data storage.
  • Performance  Clock frequency specified at 143 MHz with an access time of 5.4 ns to support synchronous memory timing.
  • Interface  Parallel memory interface for direct connection to parallel SDRAM controllers and bus architectures.
  • Power  Operating supply voltage range of 3.0 V to 3.6 V.
  • Package & Mounting  54‑lead TSOP II surface-mount package (0.400" / 10.16 mm width) for compact board-level integration.
  • Environmental Range  Operating ambient temperature range from -40°C to 85°C (TA).
  • Memory Characteristics  Volatile DRAM format intended for temporary storage and working memory applications.

Typical Applications

  • Parallel SDRAM subsystems  Use as a 128 Mbit synchronous parallel DRAM memory device where an 8M × 16 organization is required.
  • Board-level buffering  Temporary data buffering in designs that require a parallel memory interface and 3.0–3.6 V operation.
  • Compact surface-mount designs  Integration into space-constrained PCBs using the 54‑TSOP II package.
  • Temperature-sensitive deployments  Applications requiring operation across -40°C to 85°C ambient conditions.

Unique Advantages

  • 128 Mbit density in 8M × 16 organization: Provides a defined capacity and data width for parallel memory architectures.
  • Synchronous SDRAM timing: 143 MHz clock frequency and 5.4 ns access time deliver predictable, clocked memory transactions.
  • Wide supply tolerance: 3.0 V to 3.6 V supply range supports typical 3 V SDRAM power rails.
  • Compact TSOP II package: 54‑lead TSOP (0.400", 10.16 mm) enables low-profile, surface-mount integration.
  • Extended operating temperature: Rated for -40°C to 85°C ambient to accommodate a range of environmental conditions.
  • Parallel interface compatibility: Suited for systems that use standard parallel SDRAM connections and controllers.

Why Choose IS42S16800F-7TLI?

The IS42S16800F-7TLI is a focused SDRAM device offering a clear combination of density, synchronous performance, and compact packaging from Integrated Silicon Solution Inc. Its 128 Mbit capacity, 8M × 16 organization, and parallel interface make it suitable for designs that require deterministic, clocked DRAM behavior at a 143 MHz clock rate.

With a 54‑lead TSOP II surface-mount package, a 3.0–3.6 V supply range, and an operating temperature span of -40°C to 85°C, this device addresses board-level memory needs where space, supply compatibility, and environmental range are primary considerations.

Request a quote or contact sales to inquire about pricing, availability, and lead times for the IS42S16800F-7TLI.

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