IS42S16800F-7BLI
| Part Description |
IC DRAM 128MBIT PAR 54TFBGA |
|---|---|
| Quantity | 103 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TFBGA (8x8) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS42S16800F-7BLI – IC DRAM 128MBIT PAR 54TFBGA
The IS42S16800F-7BLI is a 128 Mbit synchronous DRAM (SDRAM) organized as 8M × 16 with a parallel memory interface. It provides synchronous DRAM performance with a clock frequency rating of 143 MHz and an access time of 5.4 ns for designs that require fast parallel dynamic memory.
Designed for systems operating from 3.0 V to 3.6 V and across an operating temperature range of -40°C to 85°C, the device is supplied in a compact 54‑TFBGA (8×8) package suitable for space-constrained applications that require standard SDRAM functionality.
Key Features
- Memory Type & Organization 128 Mbit SDRAM organized as 8M × 16 providing parallel DRAM storage.
- Performance Rated clock frequency up to 143 MHz with a typical access time of 5.4 ns for synchronous operation.
- Voltage Supply Operates from 3.0 V to 3.6 V, supporting systems designed around standard 3 V SDRAM supply levels.
- Temperature Range Qualified for an ambient operating temperature range of -40°C to 85°C (TA).
- Package Supplied in a 54‑TFBGA (8×8) package, enabling compact board-level integration.
- Interface Parallel memory interface compatible with standard DRAM system architectures.
Typical Applications
- Parallel SDRAM memory subsystems — Use where 128 Mbit parallel SDRAM storage is required for system memory expansion or buffering.
- Embedded systems — Integration into embedded designs that require synchronous DRAM organized as 8M × 16 and operate within the specified voltage and temperature ranges.
- Compact board-level implementations — Suited to space-constrained PCBs leveraging the 54‑TFBGA (8×8) package footprint.
Unique Advantages
- Deterministic synchronous performance: Clock-rated to 143 MHz with a 5.4 ns access time, supporting predictable DRAM timing in synchronous systems.
- Standard 3 V supply range: Operates from 3.0 V to 3.6 V, aligning with common 3 V SDRAM power rails.
- Wide operating temperature: -40°C to 85°C rating enables deployment across a broad range of environmental conditions.
- Compact BGA package: 54‑TFBGA (8×8) package reduces board area for denser system-level designs.
- Parallel 16-bit organization: 8M × 16 configuration provides a 16-bit data path for parallel memory architectures.
Why Choose IS42S16800F-7BLI?
The IS42S16800F-7BLI delivers synchronous DRAM capability in a 128 Mbit density with a parallel 16-bit organization, combining predictable timing (143 MHz clock, 5.4 ns access) with a compact 54‑TFBGA package. Its 3.0 V–3.6 V supply range and -40°C to 85°C operating window make it suitable for designs that require standard SDRAM performance across a wide temperature range.
This DRAM device is appropriate for engineers specifying parallel SDRAM memory where footprint, voltage compatibility, and synchronous timing are primary considerations. Its concise feature set supports straightforward integration into existing parallel memory subsystems and compact board layouts.
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