IS42S16800F-7BLI

IC DRAM 128MBIT PAR 54TFBGA
Part Description

IC DRAM 128MBIT PAR 54TFBGA

Quantity 103 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS42S16800F-7BLI – IC DRAM 128MBIT PAR 54TFBGA

The IS42S16800F-7BLI is a 128 Mbit synchronous DRAM (SDRAM) organized as 8M × 16 with a parallel memory interface. It provides synchronous DRAM performance with a clock frequency rating of 143 MHz and an access time of 5.4 ns for designs that require fast parallel dynamic memory.

Designed for systems operating from 3.0 V to 3.6 V and across an operating temperature range of -40°C to 85°C, the device is supplied in a compact 54‑TFBGA (8×8) package suitable for space-constrained applications that require standard SDRAM functionality.

Key Features

  • Memory Type & Organization 128 Mbit SDRAM organized as 8M × 16 providing parallel DRAM storage.
  • Performance Rated clock frequency up to 143 MHz with a typical access time of 5.4 ns for synchronous operation.
  • Voltage Supply Operates from 3.0 V to 3.6 V, supporting systems designed around standard 3 V SDRAM supply levels.
  • Temperature Range Qualified for an ambient operating temperature range of -40°C to 85°C (TA).
  • Package Supplied in a 54‑TFBGA (8×8) package, enabling compact board-level integration.
  • Interface Parallel memory interface compatible with standard DRAM system architectures.

Typical Applications

  • Parallel SDRAM memory subsystems — Use where 128 Mbit parallel SDRAM storage is required for system memory expansion or buffering.
  • Embedded systems — Integration into embedded designs that require synchronous DRAM organized as 8M × 16 and operate within the specified voltage and temperature ranges.
  • Compact board-level implementations — Suited to space-constrained PCBs leveraging the 54‑TFBGA (8×8) package footprint.

Unique Advantages

  • Deterministic synchronous performance: Clock-rated to 143 MHz with a 5.4 ns access time, supporting predictable DRAM timing in synchronous systems.
  • Standard 3 V supply range: Operates from 3.0 V to 3.6 V, aligning with common 3 V SDRAM power rails.
  • Wide operating temperature: -40°C to 85°C rating enables deployment across a broad range of environmental conditions.
  • Compact BGA package: 54‑TFBGA (8×8) package reduces board area for denser system-level designs.
  • Parallel 16-bit organization: 8M × 16 configuration provides a 16-bit data path for parallel memory architectures.

Why Choose IS42S16800F-7BLI?

The IS42S16800F-7BLI delivers synchronous DRAM capability in a 128 Mbit density with a parallel 16-bit organization, combining predictable timing (143 MHz clock, 5.4 ns access) with a compact 54‑TFBGA package. Its 3.0 V–3.6 V supply range and -40°C to 85°C operating window make it suitable for designs that require standard SDRAM performance across a wide temperature range.

This DRAM device is appropriate for engineers specifying parallel SDRAM memory where footprint, voltage compatibility, and synchronous timing are primary considerations. Its concise feature set supports straightforward integration into existing parallel memory subsystems and compact board layouts.

Request a quote or submit an inquiry to discuss availability, lead times, and pricing for the IS42S16800F-7BLI.

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