IS42S16800F-7BI

IC DRAM 128MBIT PAR 54TFBGA
Part Description

IC DRAM 128MBIT PAR 54TFBGA

Quantity 1,129 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS42S16800F-7BI – 128 Mbit Parallel SDRAM, 54-TFBGA

The IS42S16800F-7BI is a 128 Mbit volatile SDRAM organized as 8M × 16 with a parallel memory interface. It delivers high-speed volatile storage with specified clock and access characteristics for systems that require fast, temporary data buffering.

Packaged in a 54-TFBGA (54-ball thin fine-pitch BGA) footprint, the device supports a 3.0 V to 3.6 V supply range and an operating ambient temperature from -40°C to 85°C.

Key Features

  • Memory Core 128 Mbit SDRAM organized as 8M × 16, providing parallel-access volatile memory for temporary data storage.
  • Performance Rated for a clock frequency of 143 MHz with an access time of 5.4 ns, enabling fast read/write cycles within the specified timing.
  • Power Operates from a supply voltage range of 3.0 V to 3.6 V, supporting common 3 V SDRAM system rails.
  • Package 54-TFBGA package (54-ball, 8×8), offering a compact BGA form factor for board-level integration.
  • Interface Parallel memory interface suitable for designs that require direct parallel SDRAM connectivity.
  • Operating Range Specified for ambient operation from -40°C to 85°C (TA), supporting extended temperature applications.

Typical Applications

  • Embedded systems requiring high-speed volatile storage — Provides parallel SDRAM capacity and timing for temporary data buffering and working memory.
  • On-board frame buffering and data capture modules — Fast access time and 143 MHz clock rating support transient data storage needs in streaming or buffering scenarios.
  • Industrial and commercial electronic assemblies — The -40°C to 85°C ambient range and standard 3.0–3.6 V supply make it suitable for a range of temperature-controlled equipment.

Unique Advantages

  • Predictable performance: Documented 143 MHz clock frequency and 5.4 ns access time enable predictable timing for memory-critical designs.
  • Compact BGA package: The 54-TFBGA (54-ball, 8×8) package reduces board footprint while maintaining ball-grid array mounting for reliable connections.
  • Industry-standard voltage compatibility: 3.0 V to 3.6 V supply range aligns with common SDRAM power rails for straightforward system integration.
  • Wide ambient temperature range: Rated -40°C to 85°C (TA) to address applications needing extended temperature operation.
  • Parallel interface: Direct parallel memory interface simplifies integration into systems designed around parallel SDRAM architectures.

Why Choose IS42S16800F-7BI?

The IS42S16800F-7BI positions itself as a straightforward, high-speed parallel SDRAM option for designs that require 128 Mbit of volatile storage with defined timing and voltage characteristics. Its combination of 143 MHz clock rating, 5.4 ns access time, and a compact 54-TFBGA package supports designs where board space and predictable memory performance matter.

This device is well suited to engineers specifying parallel SDRAM for embedded platforms, buffering modules, and other systems needing temporary high-speed memory within a -40°C to 85°C ambient range, and operating on standard 3.0–3.6 V supply rails.

Request a quote or contact sales to discuss availability, pricing, and how the IS42S16800F-7BI fits your memory design requirements.

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