IS42S32400F-7BI-TR

IC DRAM 128MBIT PAR 90TFBGA
Part Description

IC DRAM 128MBIT PAR 90TFBGA

Quantity 1,387 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess TimeN/AGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS42S32400F-7BI-TR – IC DRAM 128MBIT PAR 90TFBGA

The IS42S32400F-7BI-TR from Integrated Silicon Solution Inc (ISSI) is a 128 Mbit volatile memory device implemented as SDRAM with a 4M x 32 organization. It provides a parallel memory interface in a 90‑TFBGA (8x13) package and operates at a clock frequency of 143 MHz.

Designed for board-level integration where a compact, parallel SDRAM solution is required, this device supports systems operating across a 3V to 3.6V supply range and an ambient temperature range of −40°C to 85°C.

Key Features

  • Memory Type and Technology 128 Mbit volatile SDRAM implemented as a 4M x 32 memory organization for parallel access.
  • Performance Rated for operation at a 143 MHz clock frequency, supporting the timing needs of parallel SDRAM interfaces.
  • Interface Parallel memory interface suitable for 32‑bit wide data paths in system designs.
  • Supply Voltage Operates from 3V to 3.6V, allowing compatibility with typical 3.3V system power rails.
  • Package Supplied in a 90‑TFBGA package (8x13) for compact, surface‑mount board integration.
  • Operating Temperature Specified for ambient operation from −40°C to 85°C (TA) to support a wide range of thermal environments.

Typical Applications

  • Parallel memory expansion — Provides 128 Mbit of SDRAM for systems that require parallel DRAM memory in a 32‑bit organization.
  • Board-level integration — The 90‑TFBGA (8x13) package fits space-constrained PCBs where a surface-mount SDRAM device is needed.
  • 3.3V system designs — Suited to applications running on 3V to 3.6V supply rails requiring parallel SDRAM.
  • Wide-temperature deployments — Operation from −40°C to 85°C supports designs exposed to extended ambient temperature ranges.

Unique Advantages

  • 32-bit parallel organization: The 4M x 32 memory layout provides a wide data path for parallel access in system memory designs.
  • Compact BGA package: 90‑TFBGA (8x13) package enables dense PCB placement while maintaining BGA reliability advantages.
  • Standard SDRAM timing: 143 MHz clock frequency aligns with common SDRAM timing requirements for parallel interfaces.
  • 3V–3.6V supply flexibility: Compatibility with common 3.3V power domains simplifies power supply design choices.
  • Extended ambient rating: −40°C to 85°C operating range supports deployment in thermally demanding environments.

Why Choose IC DRAM 128MBIT PAR 90TFBGA?

The IS42S32400F-7BI-TR delivers a straightforward 128 Mbit SDRAM solution in a 4M x 32 parallel organization, combining a 143 MHz operating clock with a compact 90‑TFBGA package. Its 3V to 3.6V supply range and −40°C to 85°C ambient rating make it suitable for designs that require reliable, board-mounted parallel DRAM memory across varied operating conditions.

This device is ideal for engineers and procurement teams specifying parallel SDRAM for system memory expansion, buffering, or other applications where a 32‑bit wide parallel interface, compact package, and wide temperature operation are key selection criteria.

Request a quote or submit an inquiry to obtain pricing, availability and ordering information for IS42S32400F-7BI-TR.

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