IS42S32400F-7BL-TR

The IS42S32400F-7BL-TR is a 128 Mbit synchronous DRAM (SDRAM) device organized as 4M × 32 with a parallel memory interface. It provides high-speed volatile storage with a rated clock frequency of 143 MHz and an access time of 5.4 ns.

Designed for systems that require compact, board-level parallel SDRAM, this device delivers a combination of density, speed, and a 90-TFBGA (8×13) package footprint suitable for space-constrained assemblies operating within a 0°C to 70°C ambient range.

Key Features

• Memory Core 128 Mbit SDRAM organized as 4M × 32, providing parallel DRAM storage in a single device.
• Performance Rated clock frequency of 143 MHz and specified access time of 5.4 ns for responsive memory transactions.
• Interface & Organization Parallel memory interface with 32-bit data organization (4M × 32) for wide data paths and straightforward system integration.
• Power Operates from a supply voltage range of 3.0 V to 3.6 V, enabling compatibility with standard 3 V SDRAM power rails.
• Package 90-TFBGA package (8×13) that minimizes board area while providing a reliable BGA footprint for surface-mount assembly.
• Operating Temperature Specified for ambient operation from 0°C to 70°C (TA), aligned with typical commercial temperature requirements.

Unique Advantages

• Compact BGA footprint: 90-TFBGA (8×13) package reduces PCB area compared with larger packages while supporting standard surface-mount processes.
• High-frequency operation: 143 MHz clock rating supports faster SDRAM cycles where higher throughput is needed.
• Wide data bus organization: 4M × 32 configuration provides a 32-bit data path in a single device, simplifying board-level memory architecture.
• Fast access time: 5.4 ns access time reduces read latency for time-sensitive memory operations.
• Standard 3 V supply: 3.0 V to 3.6 V voltage range matches common system power rails for easier integration.

Why Choose IS42S32400F-7BL-TR?

The IS42S32400F-7BL-TR positions itself as a practical SDRAM option for designs needing 128 Mbit of parallel volatile memory with solid performance characteristics: a 143 MHz clock rating, 5.4 ns access time, and a 32-bit data organization. Its 90-TFBGA package and 3.0–3.6 V supply range make it suitable for compact, board-level memory implementations within commercial temperature environments.

This device is appropriate for engineers and procurement teams specifying parallel SDRAM where verified electrical and mechanical parameters—density, speed, interface format, supply voltage, and package—are primary selection criteria.

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