IS42S32800J-75ETL-TR

IC DRAM 256MBIT PAR 86TSOP II
Part Description

IC DRAM 256MBIT PAR 86TSOP II

Quantity 1,684 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time6 nsGradeCommercial
Clock Frequency133 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of IS42S32800J-75ETL-TR - 256Mbit Synchronous DRAM

The IS42S32800J-75ETL-TR is a 256-megabit synchronous DRAM organized as 8M x 32, offering high-speed parallel memory access for embedded systems and computing applications. Built on proven SDRAM technology, this volatile memory device operates at clock frequencies up to 133MHz with a 6ns access time, delivering reliable performance for data-intensive operations. Ideal for applications requiring substantial temporary data storage with fast read/write capabilities, this DRAM provides a cost-effective solution for commercial temperature range environments.

Key Features

  • High-Density Memory Organization - The 8M x 32 architecture provides 256 megabits of storage with a wide 32-bit data bus, enabling efficient data transfer for systems processing large data blocks or multiple simultaneous operations.
  • Fast Clock and Access Performance - Operating at 133MHz clock frequency with 6ns access time ensures responsive memory operations for time-sensitive applications and systems requiring low-latency data retrieval.
  • Standard SDRAM Technology - Synchronous DRAM architecture synchronizes memory operations with the system clock, simplifying timing design and providing predictable performance characteristics for embedded controllers and processors.
  • Wide Operating Voltage Range - 3V to 3.6V supply voltage tolerance accommodates various system power designs and provides flexibility for integration with different processor and logic families.
  • Commercial Temperature Operation - Rated for 0°C to 70°C ambient temperature range, suitable for indoor computing, networking, and consumer electronics applications.
  • Compact TSOP II Package - 86-pin TSOP II package with 10.16mm width offers space-efficient surface-mount design for high-density PCB layouts.

Typical Applications

  • Networking Equipment - This SDRAM serves as buffer memory in routers and switches where the parallel interface and 133MHz operation support packet processing and routing table storage in commercial network infrastructure.
  • Embedded Computing Systems - The 256Mbit capacity and synchronous operation make this device suitable for single-board computers and embedded controllers running operating systems or applications requiring substantial RAM for program execution and data manipulation.
  • Consumer Electronics - Set-top boxes, digital displays, and multimedia devices leverage this DRAM for video frame buffering and application memory where commercial temperature ratings align with indoor use environments.
  • Test and Measurement Instruments - Data acquisition systems and bench equipment utilize this memory for capturing and storing measurement data where the parallel interface provides straightforward integration with FPGA and microprocessor-based designs.
  • Office Automation Equipment - Printers, copiers, and document scanners employ this SDRAM for image buffering and print job management where the 32-bit wide organization efficiently handles graphics and document data.

Unique Advantages

  • Straightforward Integration: Standard SDRAM interface eliminates the need for complex memory controllers, reducing design time and simplifying firmware development compared to newer memory technologies.
  • Proven Reliability: Mature SDRAM technology offers well-understood behavior and extensive field history, minimizing risk in designs where stable, predictable memory operation is essential.
  • Cost-Effective Density: 256Mbit capacity in a single device reduces component count and PCB area compared to multiple smaller memory chips while maintaining affordability for commercial applications.
  • Wide Data Bus Efficiency: 32-bit parallel organization reduces the number of memory access cycles needed for data-intensive operations, improving system throughput without requiring higher clock speeds.
  • Flexible Voltage Compatibility: 3V to 3.6V range supports both 3.3V standard logic and slightly higher voltage legacy systems without requiring level shifters or additional power supplies.
  • Established Supply Chain: Active lifecycle status from ISSI ensures ongoing availability and support for production designs with multi-year product lifecycles.

Why Choose IS42S32800J-75ETL-TR?

This SDRAM represents a practical choice for embedded and commercial electronics designs requiring reliable, high-speed volatile memory without the complexity of cutting-edge memory technologies. The combination of 256Mbit capacity, 133MHz operation, and standard SDRAM interface makes it particularly well-suited for cost-sensitive applications where proven technology reduces development risk. Engineers appreciate the straightforward integration with common processors and FPGAs, while the commercial temperature rating and compact TSOP II package align well with indoor equipment and space-constrained PCB designs.

For commercial electronics requiring dependable temporary data storage with adequate performance and density, the IS42S32800J-75ETL-TR delivers a mature, well-supported solution backed by ISSI's semiconductor expertise.

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