IS43R16320F-5TL-TR

IC DRAM 512MBIT PAR 66TSOP II
Part Description

IC DRAM 512MBIT PAR 66TSOP II

Quantity 1,737 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package66-TSOP IIMemory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time700 psGradeCommercial
Clock Frequency200 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging66-TSSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceSSTL_2Memory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNN/AHTS CodeN/A

Overview of IS43R16320F-5TL-TR – IC DRAM 512MBIT PAR 66TSOP II

The IS43R16320F-5TL-TR is a 512 Mbit DDR SDRAM device organized as 32M × 16 that provides volatile memory storage in a compact 66-TSSOP / 66-TSOP II package. It implements a DDR SDRAM architecture with an SSTL_2 memory interface and a 200 MHz clock frequency.

This device targets designs that require a mid-density DDR SDRAM component with defined timing and electrical characteristics, including a 2.3 V to 2.7 V supply range and an ambient operating range of 0 °C to 70 °C.

Key Features

  • Memory Capacity and Organization 512 Mbit total capacity, organized as 32M × 16 for straightforward bus mapping.
  • Technology DDR SDRAM architecture providing double data-rate operation at a 200 MHz clock frequency.
  • Interface SSTL_2 memory interface compatible with SSTL_2 signaling requirements.
  • Performance 200 MHz clock frequency with an access time of 700 ps and a write cycle time (word page) of 15 ns to define timing behavior.
  • Power Nominal supply voltage range of 2.3 V to 2.7 V for device operation.
  • Package Available in a 66-TSSOP (0.400", 10.16 mm width) / 66-TSOP II package for space-constrained board designs.
  • Operating Conditions Specified ambient temperature range of 0 °C to 70 °C (TA).

Typical Applications

  • Embedded memory subsystems Use as a 512 Mbit DDR SDRAM element where moderate-density volatile memory is required.
  • SSTL_2 interface designs Integration into systems that utilize SSTL_2 signaling for memory I/O.
  • Compact board-level assemblies Deployment in designs that benefit from the 66-TSOP II / 66-TSSOP package footprint.

Unique Advantages

  • Defined DDR performance: 200 MHz clock rate and 700 ps access time provide clear timing parameters for system integration.
  • SSTL_2 signaling support: Direct support for SSTL_2 interface simplifies integration in compatible memory subsystems.
  • Mid-density capacity: 512 Mbit (32M × 16) balances density and bus width for applications requiring moderate memory size.
  • Tightly specified supply range: 2.3 V to 2.7 V supply voltage narrows power design requirements for stable operation.
  • Compact package options: 66-TSSOP / 66-TSOP II package accommodates space-constrained layouts.
  • Deterministic timing: 15 ns write cycle time (word page) gives designers specific timing metrics for system-level planning.

Why Choose IS43R16320F-5TL-TR?

The IS43R16320F-5TL-TR positions itself as a straightforward 512 Mbit DDR SDRAM component with explicit electrical and timing specifications—200 MHz clocking, SSTL_2 interface, and a defined supply and temperature range—making it suitable for designs that require predictable DDR memory behavior in a compact package. Its 32M × 16 organization and 66-TSOP II / 66-TSSOP packaging support board-level designs that need moderate-density volatile memory while conserving PCB area.

This device is appropriate for engineers and procurement teams specifying DDR SDRAM elements where clarity of timing, interface type, power range, and package footprint are primary selection criteria, providing measurable parameters for system integration and long-term design planning.

Request a quote or submit an inquiry to obtain pricing and availability for IS43R16320F-5TL-TR.

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