IS43R16320F-5TL

The IS43R16320F-5TL is a 512 Mbit DDR SDRAM device organized as 32M × 16 and implemented in a DRAM memory format. It delivers DDR-class operation with a 200 MHz clock frequency and an SSTL_2 memory interface for integration into systems that require synchronous DRAM memory.

Designed for board-level memory subsystems, the device offers defined timing characteristics and operates from a 2.3 V to 2.7 V supply with a 66‑TSSOP (66‑TSOP II) package footprint, suitable for compact, through-hole-friendly PCB layouts.

Key Features

• Memory Architecture  512 Mbit capacity organized as 32M × 16 in DDR SDRAM technology for synchronous, high-speed storage.
• Performance  200 MHz clock frequency, 700 ps access time and a 15 ns write cycle time (word page), providing defined timing for system memory operations.
• Interface  SSTL_2 memory interface for systems that implement Stub Series Terminated Logic signaling.
• Power  Operates from a 2.3 V to 2.7 V supply range.
• Package  Supplied in a 66‑TSSOP / 66‑TSOP II package (0.400", 10.16 mm width) for compact PCB implementation.
• Operating Conditions  Specified operating ambient temperature range of 0°C to 70°C (TA).

Typical Applications

• DDR memory subsystems  Acts as a 512 Mbit DDR SDRAM building block in systems requiring a 32M × 16 memory organization and SSTL_2 interfacing.
• Embedded system memory  Provides working memory for embedded designs that operate within the 2.3 V–2.7 V supply range and 0°C–70°C ambient conditions.
• High-speed buffering  Suitable for data buffering roles where 200 MHz clocking, 700 ps access time, and 15 ns write cycle time align with system timing needs.

Unique Advantages

• 512 Mbit density: High single-device capacity (32M × 16) can reduce the number of devices required for a given memory footprint.
• Defined timing performance: 200 MHz clock rate with 700 ps access time and 15 ns write cycle time provide predictable DDR timing characteristics.
• SSTL_2 interface: Industry-standard signaling support for designs that implement SSTL_2 memory interfaces.
• Wide supply range: 2.3 V to 2.7 V operation accommodates systems designed around common DDR voltage rails.
• Compact 66‑TSSOP packaging: 66‑TSOP II (0.400", 10.16 mm width) package enables space-efficient board layouts.

Why Choose IC DRAM 512MBIT PAR 66TSOP II?

The IS43R16320F-5TL offers a clear specification set—512 Mbit DDR SDRAM organized as 32M × 16 with SSTL_2 interface, defined timing (200 MHz clock, 700 ps access time, 15 ns write cycle time), and a compact 66‑TSSOP package. This combination suits designs that require straightforward DDR memory integration with predictable electrical and timing characteristics.

This device is appropriate for engineers and procurement teams building memory subsystems or adding external DDR memory in designs that operate within the specified voltage (2.3 V–2.7 V) and temperature (0°C–70°C) ranges, providing a scalable, component-level solution with clear mechanical and electrical parameters.

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