IS45S16160L-7TLA2-TR

The IS45S16160L-7TLA2-TR from ISSI (Integrated Silicon Solution Inc.) is a volatile SDRAM device with a 256 Mbit capacity organized as 16M × 16. It provides synchronous DRAM performance with a 143 MHz clock specification and a 5.4 ns access time, aimed at board-level memory expansion where a compact 54‑lead TSOP II package is required.

Designed for systems that need a mid-density SDRAM in a space-efficient package, this device supports a 3.0 V to 3.6 V supply range and operates across an extended temperature range of −40 °C to 105 °C (TA), enabling use in a variety of embedded and industrial environments.

Key Features

• Memory Architecture 256 Mbit SDRAM organized as 16M × 16 providing parallel DRAM storage for board-level memory expansion.
• Performance Synchronous SDRAM specified for 143 MHz clock operation with a 5.4 ns access time to support timely data transfers.
• Interface & Voltage LVTTL memory interface and a supply voltage range of 3.0 V to 3.6 V for compatibility with common 3 V systems.
• Package Supplied in a 54‑TSOP II package (54‑TSOP, 0.400" / 10.16 mm width) for compact PCB layout and high density board designs.
• Temperature Range Rated for operation from −40 °C to 105 °C (TA), supporting extended-temperature embedded and industrial applications.
• Device Type Volatile DRAM technology suitable where temporary high-speed data storage is required.

Typical Applications

• Board-level memory expansion — Use as a 256 Mbit SDRAM component for designs requiring a 16M × 16 memory organization in a compact TSOP II footprint.
• Embedded systems — Provides synchronous DRAM storage for embedded platforms that operate from a 3.0 V–3.6 V supply and require operation across −40 °C to 105 °C.
• Industrial controllers — Suitable for industrial control applications needing reliable volatile memory in a small package and extended temperature range.

Unique Advantages

• Mid-density capacity: 256 Mbit storage balances capacity and board space for applications that do not require high-density DRAM.
• Synchronous performance: 143 MHz clock and 5.4 ns access time deliver deterministic SDRAM timing for responsive data access.
• Compact packaging: 54‑TSOP II (0.400", 10.16 mm width) reduces PCB footprint while maintaining conventional board assembly processes.
• Wide operating temperature: −40 °C to 105 °C rating supports deployment in thermally challenging environments.
• Standard voltage compatibility: 3.0 V to 3.6 V supply range and LVTTL interface simplify integration with common 3 V systems.

Why Choose IS45S16160L-7TLA2-TR?

The IS45S16160L-7TLA2-TR positions itself as a practical mid-density SDRAM option for engineers who need synchronous DRAM performance in a compact 54‑lead TSOP II package. Its 16M × 16 organization, 143 MHz clock rating, and 5.4 ns access time make it suitable for designs that require predictable memory timing and moderate capacity without a large board footprint.

This device is appropriate for designers of embedded and industrial systems that operate from a 3.0 V–3.6 V supply and require operation across −40 °C to 105 °C. Selecting this part provides a clear trade-off of capacity, package size, and operating range backed by ISSI’s component offering.

Request a quote or submit an RFQ to obtain pricing and availability for the IS45S16160L-7TLA2-TR.