IS45S16800F-7BLA1-TR

IC DRAM 128MBIT PAR 54TFBGA
Part Description

IC DRAM 128MBIT PAR 54TFBGA

Quantity 92 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TFBGA (8x8)Memory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S16800F-7BLA1-TR – 128Mbit Parallel SDRAM, 54-TFBGA

The IS45S16800F-7BLA1-TR from ISSI is a 128 Mbit volatile memory device implemented as SDRAM with a parallel interface. It is organized as 8M × 16 and supplied in a 54-TFBGA (8×8) package.

Designed for systems that require parallel DRAM memory with defined timing and supply requirements, this device provides specific performance and environmental specifications useful for embedded and board-level memory designs.

Key Features

  • Memory Type & Organization Volatile SDRAM organized as 8M × 16, delivering a total memory capacity of 128 Mbit.
  • Performance Rated clock frequency of 143 MHz with a specified access time of 5.4 ns for timing-sensitive designs.
  • Voltage Supply Operates from 3.0 V to 3.6 V, aligning with common 3.3 V system rails.
  • Interface Parallel DRAM memory interface for direct parallel access and integration into parallel-memory architectures.
  • Package 54-TFBGA (8×8) package case optimized for high-density surface mounting.
  • Operating Temperature Specified ambient operating range of −40 °C to 85 °C (TA) for extended-environment deployment.

Unique Advantages

  • Parallel SDRAM organization: 8M × 16 arrangement provides straightforward mapping for parallel-memory designs requiring 128 Mbit capacity.
  • Defined timing performance: 143 MHz clock and 5.4 ns access time supply concrete timing parameters for system-level timing closure.
  • 3.0–3.6 V supply compatibility: Matches common 3.3 V system voltages to simplify power supply planning.
  • Compact BGA package: 54-TFBGA (8×8) offers a high-density footprint for space-constrained PCB layouts.
  • Extended temperature range: −40 °C to 85 °C rating supports a broad range of ambient operating conditions.

Why Choose IC DRAM 128MBIT PAR 54TFBGA?

The IS45S16800F-7BLA1-TR delivers a defined, parallel SDRAM solution with clearly specified electrical, timing, and environmental parameters. Its 8M × 16 organization, 128 Mbit capacity, and 54-TFBGA package make it suitable for designs that require direct parallel DRAM integration with known timing and supply constraints.

This device is appropriate for engineers and procurement evaluating a compact, 128 Mbit SDRAM option with a specified clock frequency, access time, supply range, and ambient operating range. Its documented specifications support reliable system-level integration and timing analysis.

Request a quote or submit a pricing inquiry for IS45S16800F-7BLA1-TR to obtain availability and lead-time information for your design planning.

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