IS45S16800F-7BLA2

The IS45S16800F-7BLA2 is a 128 Mbit volatile DRAM organized as 8M × 16 and implemented as SDRAM with a parallel memory interface. It delivers moderate-density, low-latency volatile storage with a specified clock frequency of 143 MHz and an access time of 5.4 ns.

Designed for board-level integration, this device operates from 3.0 V to 3.6 V and is supplied in a 54‑TFBGA (8 × 8) package. Its operating ambient temperature range is −40 °C to 105 °C, suitable for systems that require extended temperature capability.

Key Features

• Memory Architecture 128 Mbit SDRAM organized as 8M × 16, providing parallel DRAM storage for system memory expansion or buffering.
• Performance Supports a clock frequency of 143 MHz and an access time of 5.4 ns for low-latency data access.
• Interface Parallel memory interface compatible with standard SDRAM parallel bus implementations.
• Power Operating supply voltage range of 3.0 V to 3.6 V, enabling compatibility with 3 V nominal systems.
• Package 54‑TFBGA (8 × 8) package case for compact board-level mounting and predictable footprint.
• Temperature Range Specified operating ambient temperature from −40 °C to 105 °C for extended thermal environments.

Typical Applications

• Parallel memory subsystems — Acts as parallel SDRAM memory for systems that require 8M × 16 organization and moderate density volatile storage.
• Board-level memory expansion — Provides a 128 Mbit DRAM option for designers adding onboard SDRAM capacity in compact package formats.
• Embedded system buffering — Suitable where low-latency SDRAM access (5.4 ns) and a 143 MHz clock rate are required for temporary data storage and buffering.

Unique Advantages

• Moderate-density 128 Mbit capacity: Offers a practical storage size (8M × 16) for designs needing mid-range DRAM without higher-density complexity.
• Low-latency operation: 5.4 ns access time supports faster data retrieval within SDRAM access constraints.
• 143 MHz clock support: Enables operation at a defined clock frequency for predictable timing and performance planning.
• Wide operating voltage: 3.0 V to 3.6 V supply range aligns with common 3 V system rails.
• Compact 54‑TFBGA package: Small footprint (8 × 8) suitable for space-constrained board designs.
• Extended temperature capability: −40 °C to 105 °C ambient range supports use in environments with broad thermal requirements.

Why Choose IC DRAM 128MBIT PAR 54TFBGA?

The IS45S16800F-7BLA2 combines a straightforward 8M × 16 SDRAM organization with measurable performance characteristics—143 MHz clock and 5.4 ns access time—delivered in a space-efficient 54‑TFBGA package. Its 3.0 V–3.6 V supply and −40 °C to 105 °C operating range make it a practical choice for designs that need reliable, mid-density parallel DRAM on board.

This device is well suited for engineers specifying moderate-capacity volatile memory for buffering, temporary storage, or board-level expansion where compact packaging and defined timing are important design criteria. Manufactured by Integrated Silicon Solution Inc., it provides a clear, specification-driven option for embedded memory implementations.

If you need pricing, lead-time, or to submit a quote request for the IS45S16800F-7BLA2, please request a quote or contact sales for additional purchasing information and availability.