IS45S16800F-7TLA1-TR

IC DRAM 128MBIT PAR 54TSOP II
Part Description

IC DRAM 128MBIT PAR 54TSOP II

Quantity 1,368 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size128 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S16800F-7TLA1-TR – IC DRAM 128MBIT PAR 54TSOP II

The IS45S16800F-7TLA1-TR is a volatile SDRAM device providing 128 Mbit of parallel memory organized as 8M × 16. It implements a synchronous DRAM architecture designed for systems that require parallel SDRAM storage with defined timing and electrical characteristics.

Key attributes include a 143 MHz clock frequency, 5.4 ns access time, 3.0–3.6 V supply range, and a 54‑TSOP II (10.16 mm width) package, making it suitable for board-level integration where a parallel SDRAM footprint and these electrical/thermal ranges are required.

Key Features

  • Memory Type and Capacity 128 Mbit DRAM organized as 8M × 16 for parallel data access.
  • SDRAM Technology Synchronous DRAM architecture supporting a parallel memory interface.
  • Performance Rated Clock Frequency of 143 MHz and Access Time of 5.4 ns for time-critical memory transactions.
  • Voltage Supply Operates from 3.0 V to 3.6 V, providing defined supply requirements for system power design.
  • Package Supplied in a 54‑TSOP II package (0.400", 10.16 mm width) for surface-mount board assembly.
  • Operating Temperature Specified for −40 °C to 85 °C ambient (TA), supporting a wide industrial temperature range.
  • Interface Parallel memory interface suitable for systems designed around parallel DRAM connectivity.

Typical Applications

  • Parallel memory subsystems — Provides 128 Mbit of SDRAM for systems that require a synchronous parallel DRAM component.
  • Board-level integration — 54‑TSOP II package supports surface-mount assembly where a compact parallel DRAM package is needed.
  • Industrial embedded equipment — Operation from −40 °C to 85 °C and standard 3.0–3.6 V supply make the device suitable for embedded applications with defined thermal and voltage requirements.

Unique Advantages

  • Defined SDRAM performance: 143 MHz clock and 5.4 ns access time provide quantifiable timing characteristics for system timing budgets.
  • 16-bit memory organization: 8M × 16 layout aligns with 16-bit data buses to simplify memory data-path planning.
  • Wide operating temperature: −40 °C to 85 °C rating supports use across a broad range of ambient conditions.
  • Standard supply voltage: 3.0–3.6 V operation fits systems designed around common 3 V supply domains.
  • Surface-mount TSOP II package: 54‑TSOP II footprint facilitates PCB implementation where this package style is required.

Why Choose IS45S16800F-7TLA1-TR?

IS45S16800F-7TLA1-TR is positioned for designers needing a straightforward parallel SDRAM device with clear performance and electrical specifications. Its 128 Mbit capacity, 8M × 16 organization, and defined timing (143 MHz clock, 5.4 ns access) make it appropriate for designs that require deterministic SDRAM behavior and a standard 3.0–3.6 V supply.

The combination of a 54‑TSOP II package and a −40 °C to 85 °C operating range supports board-level integration in environments with varied thermal demands. This device is suited to development and production scenarios where specification-driven component selection and predictable memory characteristics are important.

Request a quote or submit an inquiry for IS45S16800F-7TLA1-TR to receive pricing and availability information suited to your project requirements.

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