IS45S16800F-7TLA1-TR
| Part Description |
IC DRAM 128MBIT PAR 54TSOP II |
|---|---|
| Quantity | 1,368 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS45S16800F-7TLA1-TR – IC DRAM 128MBIT PAR 54TSOP II
The IS45S16800F-7TLA1-TR is a volatile SDRAM device providing 128 Mbit of parallel memory organized as 8M × 16. It implements a synchronous DRAM architecture designed for systems that require parallel SDRAM storage with defined timing and electrical characteristics.
Key attributes include a 143 MHz clock frequency, 5.4 ns access time, 3.0–3.6 V supply range, and a 54‑TSOP II (10.16 mm width) package, making it suitable for board-level integration where a parallel SDRAM footprint and these electrical/thermal ranges are required.
Key Features
- Memory Type and Capacity 128 Mbit DRAM organized as 8M × 16 for parallel data access.
- SDRAM Technology Synchronous DRAM architecture supporting a parallel memory interface.
- Performance Rated Clock Frequency of 143 MHz and Access Time of 5.4 ns for time-critical memory transactions.
- Voltage Supply Operates from 3.0 V to 3.6 V, providing defined supply requirements for system power design.
- Package Supplied in a 54‑TSOP II package (0.400", 10.16 mm width) for surface-mount board assembly.
- Operating Temperature Specified for −40 °C to 85 °C ambient (TA), supporting a wide industrial temperature range.
- Interface Parallel memory interface suitable for systems designed around parallel DRAM connectivity.
Typical Applications
- Parallel memory subsystems — Provides 128 Mbit of SDRAM for systems that require a synchronous parallel DRAM component.
- Board-level integration — 54‑TSOP II package supports surface-mount assembly where a compact parallel DRAM package is needed.
- Industrial embedded equipment — Operation from −40 °C to 85 °C and standard 3.0–3.6 V supply make the device suitable for embedded applications with defined thermal and voltage requirements.
Unique Advantages
- Defined SDRAM performance: 143 MHz clock and 5.4 ns access time provide quantifiable timing characteristics for system timing budgets.
- 16-bit memory organization: 8M × 16 layout aligns with 16-bit data buses to simplify memory data-path planning.
- Wide operating temperature: −40 °C to 85 °C rating supports use across a broad range of ambient conditions.
- Standard supply voltage: 3.0–3.6 V operation fits systems designed around common 3 V supply domains.
- Surface-mount TSOP II package: 54‑TSOP II footprint facilitates PCB implementation where this package style is required.
Why Choose IS45S16800F-7TLA1-TR?
IS45S16800F-7TLA1-TR is positioned for designers needing a straightforward parallel SDRAM device with clear performance and electrical specifications. Its 128 Mbit capacity, 8M × 16 organization, and defined timing (143 MHz clock, 5.4 ns access) make it appropriate for designs that require deterministic SDRAM behavior and a standard 3.0–3.6 V supply.
The combination of a 54‑TSOP II package and a −40 °C to 85 °C operating range supports board-level integration in environments with varied thermal demands. This device is suited to development and production scenarios where specification-driven component selection and predictable memory characteristics are important.
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