IS45S32200N-7BLA2

IC DRAM 64MBIT PAR 90TFBGA
Part Description

IC DRAM 64MBIT PAR 90TFBGA

Quantity 986 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time16 Weeks
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeAutomotive
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 105°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization2M x 32
Moisture Sensitivity LevelN/ARoHS ComplianceN/AREACH ComplianceREACH Unknown
QualificationN/AECCNN/AHTS CodeN/A

Overview of IS45S32200N-7BLA2 – IC DRAM 64MBIT PAR 90TFBGA

The IS45S32200N-7BLA2 is a 64 Mbit synchronous dynamic RAM (SDRAM) organized as 2M × 32. It provides clocked SDRAM performance with a specified clock frequency of 143 MHz and an access time of 5.4 ns.

Designed for applications that require compact, board-level DRAM capacity, this device combines a 90-TFBGA (8×13) package with a LVTTL memory interface and a 3.0 V–3.6 V supply range, and supports an operating ambient temperature range of -40°C to 105°C.

Key Features

  • Memory Architecture  64 Mbit SDRAM organized as 2M × 32, providing a wide 32-bit data path for system memory and buffering tasks.
  • Performance  Clock frequency rated at 143 MHz with a typical access time of 5.4 ns, enabling synchronous, clocked memory operations.
  • Interface and Signaling  LVTTL memory interface for logic-level compatibility with systems expecting LVTTL signaling.
  • Power  Supports a supply voltage range of 3.0 V to 3.6 V for integration into 3 V-class designs.
  • Package  Supplied in a 90-TFBGA (8×13) package, offering a compact footprint for high-density board layouts.
  • Operating Range  Rated for ambient operating temperatures from -40°C to 105°C (TA), suitable for a broad set of environmental conditions.

Typical Applications

  • Embedded Systems  Provides synchronous DRAM capacity for system memory and buffering in embedded controller and module designs.
  • Consumer and Industrial Electronics  Compact 90-TFBGA package and 64 Mbit capacity fit memory requirements where board space is constrained.
  • Data Buffering  2M × 32 organization supports wide-data buffering and temporary storage in digital subsystems.

Unique Advantages

  • Compact, high-density memory: 64 Mbit capacity in a 90-TFBGA (8×13) package reduces PCB area compared with larger packages.
  • Synchronous performance: 143 MHz clock rating and 5.4 ns access time provide predictable, clocked SDRAM behavior for timing-critical designs.
  • <strong_Wide data path: 2M × 32 organization delivers a 32-bit data interface for efficient data transfers and buffering.
  • 3 V-class power compatibility: 3.0 V–3.6 V supply range aligns with standard 3 V system rails.
  • Extended temperature capability: -40°C to 105°C ambient rating supports deployment across diverse environmental conditions.
  • Established manufacturer: Produced by Integrated Silicon Solution Inc., providing traceable device identification.

Why Choose IS45S32200N-7BLA2?

The IS45S32200N-7BLA2 offers a balance of synchronous performance, compact packaging and a wide operating temperature range, making it suitable for designs that require a reliable 64 Mbit DRAM solution in a space-efficient 90-TFBGA footprint. Its 2M × 32 organization and LVTTL interface simplify integration into systems that need a wide data path and standard logic-level signaling.

This device is appropriate for engineers and procurement teams specifying board-level SDRAM where predictable clocked operation, a 3 V-class supply and extended ambient temperature support are key selection criteria.

Request a quote or contact sales to check availability and pricing for the IS45S32200N-7BLA2.

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