IS45S32800L-7TLA1-TR

The IS45S32800L-7TLA1-TR from ISSI (Integrated Silicon Solution Inc) is a 256 Mbit volatile SDRAM device organized as 8M × 32. It implements DRAM architecture with an LVTTL memory interface and is designed for automotive-grade applications.

With a 143 MHz clock capability, 5.4 ns access time, and AEC-Q100 qualification, this device targets systems that require automotive-rated memory with defined operating temperature and voltage ranges.

Key Features

• Memory Core and Technology SDRAM DRAM architecture providing volatile storage with a memory organization of 8M × 32 for a total of 256 Mbit.
• Density & Organization 256 Mbit capacity implemented as 8M × 32, enabling a straightforward 32-bit data bus configuration.
• Performance Supports a 143 MHz clock frequency with a typical access time of 5.4 ns for responsive read/write operations.
• Interface & Voltage LVTTL memory interface; supply voltage range of 3.0 V to 3.6 V to match common 3V system rails.
• Automotive Qualification & Temperature Range AEC-Q100 qualification and an operating temperature range of –40°C to +85°C (TA) for automotive-grade reliability.
• Package & Mounting Supplied in an 86-TSOP II (86-TFSOP, 0.400" / 10.16 mm width) package suitable for standard surface-mount assembly.
• Manufacturer Produced by ISSI (Integrated Silicon Solution Inc).

Typical Applications

• Automotive electronic systems — Memory for in-vehicle systems where AEC-Q100 qualification and –40°C to +85°C operation are required.
• Embedded control modules — Volatile SDRAM for buffering and temporary data storage in embedded processors with a 32-bit interface.
• On-board buffering and frame storage — 256 Mbit density used for intermediate data buffering in systems that leverage LVTTL signaling.

Unique Advantages

• AEC-Q100 Qualified: Provides automotive-grade qualification for designs that require supplier-level automotive reliability.
• Wide Operating Temperature: Specified for –40°C to +85°C (TA), supporting typical automotive ambient conditions.
• Compact TSOP II Package: 86-TSOP II (86-TFSOP) package with a 10.16 mm width allows high-density board integration in constrained layouts.
• Fast Access and Clocking: 5.4 ns access time and 143 MHz clock frequency support responsive memory operations for time-sensitive tasks.
• Standard 3 V Supply Range: Operates from 3.0 V to 3.6 V, aligning with common 3V system power domains.
• 32-bit Data Organization: 8M × 32 organization simplifies integration with 32-bit memory buses.

Why Choose AUTOMOTIVE (-40 TO +85C), 256M,?

The IS45S32800L-7TLA1-TR positions itself as an automotive-grade SDRAM option balancing density, speed, and qualification. Its AEC-Q100 status, defined temperature range, and 3.0–3.6 V supply make it suitable for designs requiring a qualified 256 Mbit DRAM with LVTTL interface and TSOP II packaging.

This device is well suited for engineers developing automotive and embedded systems that need a verified memory component for buffering, frame storage, or temporary data storage. Its manufacturer pedigree and clear electrical and mechanical specifications support predictable integration and long-term design planning.

Request a quote or contact sales to discuss pricing, lead times, and availability for the IS45S32800L-7TLA1-TR.