IS45S32800L-7TLA1

AUTOMOTIVE (-40 TO +85C), 256M,
Part Description

AUTOMOTIVE (-40 TO +85C), 256M,

Quantity 817 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time16 Weeks
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeAutomotive
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceLVTTLMemory Organization8M x 32
Moisture Sensitivity LevelN/ARoHS ComplianceN/AREACH ComplianceREACH Unknown
QualificationAEC-Q100ECCNN/AHTS CodeN/A

Overview of IS45S32800L-7TLA1 – AUTOMOTIVE (-40 TO +85C), 256M

The IS45S32800L-7TLA1 is a 256 Mbit volatile SDRAM organized as 8M × 32, designed for applications that require fast, parallel DRAM storage. It provides a 143 MHz clock frequency with a typical access time of 5.4 ns and operates from a 3.0 V to 3.6 V supply.

Targeted for automotive-grade environments, the device is qualified to AEC-Q100 and specified for operation across an ambient temperature range of −40 °C to +85 °C, offering a combination of performance and automotive-level qualification for system memory needs.

Key Features

  • Memory Architecture 256 Mbit SDRAM organized as 8M × 32 (DRAM format) for high-density, parallel memory storage.
  • Performance Supports a 143 MHz clock frequency with a listed access time of 5.4 ns, suitable for time-sensitive data buffering and working memory.
  • Voltage and Interface Operates from 3.0 V to 3.6 V and uses an LVTTL memory interface, enabling compatibility with common 3 V logic domains.
  • Automotive Qualification & Temperature Range AEC-Q100 qualified and specified for −40 °C to +85 °C ambient operation, meeting automotive-grade qualification requirements.
  • Package and Mounting Available in an 86-TSOP II / 86-TFSOP package (0.400" / 10.16 mm width) for surface-mount PCB implementations.

Typical Applications

  • Automotive Electronics Memory for in-vehicle systems that require a qualified automotive-grade DRAM solution across −40 °C to +85 °C.
  • Embedded Memory Buffers Local volatile storage for processors and controllers needing 8M × 32 organization and 143 MHz operation.
  • High-speed Data Handling Use in designs that benefit from a 5.4 ns access time for fast read/write operations and temporary data storage.

Unique Advantages

  • AEC-Q100 Qualification: Provides an industry-recognized automotive qualification to support designs requiring qualified components.
  • Wide Operating Temperature: Specified for −40 °C to +85 °C to support temperature-demanding environments.
  • High-frequency Operation: 143 MHz clock capability and 5.4 ns access time deliver responsive DRAM performance for buffering and working memory.
  • Standard 3 V Supply: 3.0 V to 3.6 V supply range aligns with common system voltage rails for straightforward integration.
  • Compact TSOP Package: 86-TSOP II (10.16 mm width) surface-mount package for space-conscious PCB layouts.

Why Choose IS45S32800L-7TLA1?

The IS45S32800L-7TLA1 positions itself as a performance-oriented SDRAM option for designs that require automotive qualification, fast access times, and a compact surface-mount footprint. Its 8M × 32 organization, 143 MHz clock support, and 3.0–3.6 V operation make it suitable for systems that need reliable volatile memory at automotive ambient temperatures.

This device is appropriate for engineers and procurement teams working on automotive and embedded designs where AEC-Q100 qualification, predictable timing (5.4 ns access), and a TSOP package are important selection criteria for long-term system reliability and integration.

Request a quote or submit an inquiry to the sales team to discuss availability, pricing, and sample requirements for the IS45S32800L-7TLA1.

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