IS46R16160F-5TLA1

The IS46R16160F-5TLA1 is a 256 Mbit DDR SDRAM organized as 16M × 16 with a parallel memory interface. It delivers DDR-class operation with a 200 MHz clock frequency and is targeted at systems that require compact, volatile parallel memory.

Key electrical and environmental parameters include a supply voltage range of 2.3 V to 2.7 V, an access time of 700 ps, a write cycle time (word/page) of 15 ns, and an operating temperature range of −40 °C to 85 °C. The device is supplied in a 66-TSSOP (66-TSOP II) package.

Key Features

• Memory Core 256 Mbit DRAM organized as 16M × 16, implemented as DDR SDRAM.
• Performance Supports a 200 MHz clock frequency and a 700 ps access time for DDR operation.
• Interface Parallel memory interface suitable for direct bus integration in systems needing parallel DRAM.
• Timing Write cycle time (word/page) specified at 15 ns, providing deterministic write timing for system designers.
• Power Operates from a 2.3 V to 2.7 V supply window.
• Package Available in a 66-TSSOP (0.400", 10.16 mm width) TSOP II package for compact board-level implementation.
• Temperature Range Qualified for operation from −40 °C to 85 °C (TA) for use in temperature-demanding environments.

Typical Applications

• Parallel memory systems — For designs that require a 16M × 16, 256 Mbit DDR SDRAM with a parallel interface for direct bus connection.
• Embedded memory expansion — Adds volatile DDR storage where a compact TSOP II package and low-voltage operation are required.
• Temperature-demanding electronics — Suited to systems that must operate across a −40 °C to 85 °C ambient range.

Unique Advantages

• Compact package footprint: 66-TSSOP (TSOP II) package enables higher board density while accommodating 256 Mbit capacity.
• DDR performance at 200 MHz: Provides DDR-class clocking suitable for systems needing higher memory throughput.
• Precise timing specifications: 700 ps access time and 15 ns write cycle time support predictable memory timing in system design.
• Low-voltage operation: 2.3 V to 2.7 V supply range reduces system power domain complexity.
• Wide operating temperature: −40 °C to 85 °C rating supports use in environments with broad temperature variation.
• Parallel interface: Simplifies integration into designs that require direct parallel DRAM connectivity.

Why Choose IS46R16160F-5TLA1?

The IS46R16160F-5TLA1 combines a 256 Mbit DDR SDRAM core with a parallel interface in a compact 66-TSSOP II package, providing a practical balance of capacity, performance, and board-level density. Its specified timing (700 ps access, 15 ns write cycle) and 200 MHz clock capability make it suitable for systems that require predictable DDR memory behavior.

With a 2.3 V–2.7 V supply range and an operating temperature window from −40 °C to 85 °C, this device is appropriate for designs that need low-voltage DDR operation and broad temperature tolerance. Manufactured by ISSI (Integrated Silicon Solution Inc), it offers a clear specification set for procurement and engineering evaluation.

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