M12L64164A-7B(2C)

64Mb SDRAM Ind.
Part Description

Ind. -40~85°C, SDRAM, 3.3V

Quantity 1,324 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusActive
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54 TSOPII/ 54 VBGAMemory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5 nsGradeIndustrial
Clock Frequency143 MHzVoltage2.5VMemory TypeVolatile
Operating Temperature-40°C – 85°CWrite Cycle Time Word Page14 nsPackaging54 TSOPII/ 54 VBGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization4M x 16
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationJEDECECCNEAR99HTS Code8542.32.00.02

Overview of M12L64164A-7B(2C) – Ind. -40~85°C, SDRAM, 3.3V

The M12L64164A-7B(2C) is an industrial-grade synchronous DRAM (SDRAM) device from ESMT, offering 67,108,864 bits of volatile memory organized as 4M × 16 with four internal banks. Its synchronous design and parallel interface enable precise cycle control and I/O transactions synchronized with the system clock, making it suitable for high-bandwidth, high-performance memory system applications.

Designed for surface-mount assembly, the part is available in 54-pin TSOP II and 54-ball VBGA packages and is qualified to operate across industrial temperature ranges, supporting robust operation in demanding embedded and networking environments.

Key Features

  • Memory Organization & Capacity 67,108,864 bits total, organized as 4 × 1,048,576 words × 16 bits for compact, word-addressable storage.
  • SDRAM Architecture & Interface Synchronous DRAM with parallel interface; all inputs sampled on the positive edge of the system clock and four-bank operation for interleaved access.
  • Performance Maximum specified clock frequency 143 MHz with 5 ns access time and 14 ns write cycle time (word/page). Supports CAS latency options of 2 and 3.
  • Burst Control & Flexibility Programmable burst lengths (1, 2, 4, 8 and full page) and burst types (sequential and interleave) to match diverse transfer patterns.
  • Power & I/O JEDEC standard 3.3V power supply and separate VDDQ/VSSQ for isolated data output power and improved noise immunity.
  • Refresh & Reliability Auto and self-refresh supported with a 64 ms refresh period (4K cycles) and 15.6 µs refresh interval for data integrity over time.
  • Package & Mounting Available in 54 TSOP II and 54 VBGA packages; surface-mount mounting type suited for modern PCB assembly processes.
  • Industrial Grade Temperature Qualified for operation from −40 °C to 85 °C for use in temperature-demanding applications.
  • Standards & Compliance JEDEC-compliant SDRAM with LVTTL-compatible inputs and DQM data masking support for controlled I/O behavior.

Typical Applications

  • Industrial Control Systems High-bandwidth buffer memory for embedded controllers and industrial automation where wide operating temperature is required.
  • Networking & Communication Equipment Packet buffering and temporary storage for high-performance networking modules that require synchronous, low-latency memory.
  • Video and Graphics Buffers Frame buffering and streaming applications that benefit from burst-mode transfers and programmable latencies.
  • Embedded Storage Controllers Working memory for controllers and intermediate data staging in solid-state and storage-related designs.

Unique Advantages

  • Industrial Temperature Range: Rated for −40 °C to 85 °C, enabling deployment in harsh and temperature-variable environments.
  • Flexible Performance Modes: Support for CAS latency 2 and 3 plus multiple burst lengths provides designers with tuning options to match system timing and throughput needs.
  • JEDEC-Compatible Design: JEDEC-standard supply and timing features simplify integration into existing SDRAM memory subsystems and design flows.
  • Separate I/O Power Domain: VDDQ/VSSQ isolation for output buffers improves noise immunity and signal integrity in mixed-signal and high-speed designs.
  • Multiple Package Options: Choice of 54 TSOP II or 54 VBGA packages supports form-factor flexibility and PCB assembly preferences.
  • Built-In Refresh Mechanisms: Auto and self-refresh capabilities with defined refresh timing reduce system-level refresh management complexity.

Why Choose M12L64164A-7B(2C)?

The M12L64164A-7B(2C) delivers a balanced combination of synchronous DRAM performance, industrial temperature capability, and JEDEC-compliant features for designers needing reliable, high-bandwidth volatile memory. Its 4M × 16 organization, four-bank architecture and programmable burst/latency options make it adaptable to a wide range of embedded and networking applications where deterministic timing and buffer throughput matter.

This part is well suited for engineers and procurement teams building systems that require robust operation across extended temperature ranges, surface-mount package options, and standard SDRAM interoperability backed by ESMT documentation and refresh/control features.

Request a quote or submit an RFQ today to check availability, pricing, and lead times for the M12L64164A-7B(2C) industrial SDRAM. Our team can provide technical documentation and support to help integrate this device into your design.

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