MT29F256G08AMCBBH7-6IT:B TR

The MT29F256G08AMCBBH7-6IT:B TR is a 256 Gbit non-volatile NAND flash memory device using SLC flash technology. It is organized as 32G × 8 and provides a parallel memory interface with a specified clock frequency of 167 MHz.

This device is supplied for designs that require high-density parallel flash memory in a compact 152-TBGA (14 × 18) package and operates over an ambient temperature range of -40°C to 85°C with a supply voltage range of 2.7 V to 3.6 V.

Key Features

• Core Memory 256 Gbit non-volatile NAND flash organized as 32G × 8 using SLC technology.
• Interface Parallel memory interface with a clock frequency specification of 167 MHz.
• Power Single supply voltage range of 2.7 V to 3.6 V for system compatibility with common 3.3 V rails.
• Package 152-TBGA package (14 × 18 mm) provides a compact footprint for high-density flash integration.
• Operating Temperature Specified ambient operating range of -40°C to 85°C.
• Memory Format Flash memory in parallel configuration suited for direct memory-mapped applications requiring non-volatile storage.

Typical Applications

• Embedded Storage Systems — Provides high-density parallel NAND flash storage in systems that require a 256 Gbit non-volatile memory solution at 3.3 V class supply voltages.
• Industrial Electronics — Suitable for industrial designs that require operation across an ambient range of -40°C to 85°C and a compact 152-TBGA package.
• Board-Level Memory Expansion — Can be used where a parallel SLC NAND flash device with 32G × 8 organization and a 167 MHz clock interface is required for direct memory mapping.

Unique Advantages

• High Density Storage: 256 Gbit capacity enables large non-volatile data storage while minimizing board area using a single device.
• SLC NAND Technology: SLC flash architecture as specified provides the underlying flash format for the device.
• Parallel Interface with Defined Clock: Parallel interface operating at a clock frequency of 167 MHz supports synchronous memory access patterns on compatible designs.
• Wide Supply Range: 2.7 V to 3.6 V supply range supports integration into common 3.3 V systems.
• Compact TBGA Package: 152-TBGA (14 × 18) package allows high-density placement on PCBs where space is constrained.
• Extended Temperature Operation: Rated for -40°C to 85°C ambient operation for temperature-sensitive deployments.

Why Choose MT29F256G08AMCBBH7-6IT:B TR?

The MT29F256G08AMCBBH7-6IT:B TR is positioned for designs that need a high-capacity, parallel SLC NAND flash memory device with clearly specified electrical and thermal limits. Its 256 Gbit capacity, 32G × 8 organization, 167 MHz clock specification, 2.7 V–3.6 V supply range, and 152-TBGA package make it suitable for compact, board-level memory implementations that operate across an extended temperature range.

This device is appropriate for engineers and procurement teams looking for a defined, high-density parallel flash component that integrates into systems requiring the listed interface, package, voltage and temperature specifications.

Request a quote or contact sales to discuss pricing, availability, and to submit a purchase inquiry for the MT29F256G08AMCBBH7-6IT:B TR.