MT29F256G08CECCBH6-6ITR:C TR

The MT29F256G08CECCBH6-6ITR:C TR from Micron Technology Inc. is a 256 Gbit non-volatile NAND flash memory device implemented with MLC technology. It provides a parallel memory interface in a 152-VBGA (14×18) package and is organized as 32G × 8.

Designed for systems that require high-density parallel flash storage, this device offers a defined operating range and supply voltage that support integration into a variety of embedded applications where 256 Gbit of NAND flash is required.

Key Features

• Memory Core 
  256 Gbit NAND flash using MLC technology, organized as 32G × 8 to deliver high-density non-volatile storage.
• Interface 
  Parallel memory interface with a clock frequency specified at 167 MHz for synchronous operation within supported system designs.
• Package 
  152-VBGA package (14 × 18 mm) providing a compact BGA footprint for board-level integration.
• Power 
  Operates from a 2.7 V to 3.6 V supply range, enabling compatibility with common system power rails.
• Temperature Range 
  Rated for operation from −40°C to 85°C (TA), supporting industrial-temperature deployments within that range.
• Memory Format 
  Non-volatile flash memory suitable for persistent data storage in embedded systems.

Typical Applications

• Embedded Storage 
  Provides 256 Gbit of non-volatile NAND storage for embedded systems that require high-capacity local memory.
• Consumer Devices 
  Parallel flash storage in a compact 152-VBGA package for integration into consumer electronics with board space constraints.
• Industrial Systems 
  Operates across −40°C to 85°C, enabling use in industrial control and instrumentation within the specified temperature range.

Unique Advantages

• High storage density: 256 Gbit capacity delivered in a single device reduces the need for multiple memory components.
• Parallel interface with defined clock: 167 MHz clock frequency supports predictable timing in parallel memory architectures.
• Wide supply voltage compatibility: 2.7 V to 3.6 V operation aligns with common system power domains for flexible integration.
• Compact BGA packaging: 152-VBGA (14×18) footprint balances high density with a small board area impact.
• Industrial temperature operation: Rated −40°C to 85°C to meet temperature requirements for many embedded and industrial applications.

Why Choose MT29F256G08CECCBH6-6ITR:C TR?

The MT29F256G08CECCBH6-6ITR:C TR positions itself as a high-density NAND flash option for designs that need 256 Gbit of non-volatile storage in a compact BGA package. Its parallel interface, defined clock frequency, and broad supply voltage range simplify integration into systems that use parallel flash memory architectures.

This device is suited for engineers and procurement teams specifying high-capacity flash where package size, operating temperature range, and supply compatibility are key selection criteria. The Micron-branded device provides a clear specification set for predictable system integration and deployment.

Request a quote or submit an inquiry to obtain pricing, availability, and delivery information for the MT29F256G08CECCBH6-6ITR:C TR.