MT29F256G08CJAABWP-12RZ:A TR

The MT29F256G08CJAABWP-12RZ:A TR is a 256 Gbit non-volatile NAND flash memory device implemented in a parallel interface format. It uses FLASH - NAND (MLC) technology with a 32G × 8 memory organization to deliver high-density storage in a compact 48-TSOP I package.

Designed for systems that require parallel NAND flash storage, the device operates across a 2.7 V to 3.6 V supply range and supports an 83 MHz clock frequency, providing predictable electrical and timing characteristics for board-level integration.

Key Features

• Memory Core (MLC NAND) FLASH - NAND (MLC) architecture offering multi-level cell storage with a total memory size of 256 Gbit organized as 32G × 8.
• Parallel Memory Interface Parallel memory interface suitable for systems requiring parallel data access and control signaling.
• Clock and Timing Supports an 83 MHz clock frequency for interface timing.
• Voltage Range Operates from 2.7 V to 3.6 V, supporting common 3.3 V system supplies.
• Package Available in a 48-TSOP I (48-TFSOP, 0.724" / 18.40 mm width) package for board-level mounting.
• Operating Temperature Rated for 0°C to 70°C (TA) operating temperature.

Typical Applications

• Non-volatile storage Provides 256 Gbit of persistent NAND flash storage for systems that require high-density non-volatile memory with a parallel interface.
• Parallel interface systems Suited to designs that use a parallel memory interface and require an 83 MHz clock domain for timing.
• Board-level integration 48-TSOP I packaging (0.724", 18.40 mm width) supports compact footprint requirements on printed circuit boards.
• 3.3 V supply environments Operates within a 2.7 V to 3.6 V range for compatibility with standard 3.3 V system rails.

Unique Advantages

• High storage density: 256 Gbit capacity in a single device reduces the need for multiple components to achieve large non-volatile storage.
• Parallel interface compatibility: Parallel memory interface simplifies integration into systems designed around parallel NOR/NAND memory buses.
• Standard TSOP packaging: 48-TSOP I package provides a compact, board-mountable form factor with defined mechanical dimensions.
• Flexible supply range: 2.7 V to 3.6 V operation supports a variety of 3.3 V system architectures.
• Defined operating range: Rated for 0°C to 70°C (TA), enabling use in commercial-temperature applications.

Why Choose IC FLASH 256GBIT PAR 48TSOP I?

The MT29F256G08CJAABWP-12RZ:A TR delivers a combination of high-density 256 Gbit MLC NAND flash, a parallel interface, and a compact 48-TSOP I package to address designs that require significant non-volatile storage in a board-level footprint. Its defined voltage range (2.7 V–3.6 V), 83 MHz clock support, and 0°C–70°C operating window make it a practical choice for systems engineered around parallel flash memory.

Manufactured by Micron Technology Inc., the device is suited for engineers and procurement teams specifying non-volatile parallel NAND flash where memory capacity, package form factor, and standard electrical interfaces are primary selection criteria.

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