MT29F256G08CMCGBJ4-37R:G TR

The MT29F256G08CMCGBJ4-37R:G TR is a 256 Gbit non-volatile NAND flash memory device using MLC technology and a parallel memory interface. It is organized as 32G × 8 and is specified with a 267 MHz clock frequency, making it suitable for systems that require large-capacity parallel flash storage.

Packaged in a 132-VBGA (12 × 18) form factor and operating from a 2.7 V to 3.6 V supply, this device targets board-level integration where compact package size, defined voltage range, and standard operating temperature (0°C to 70°C) are important design parameters.

Key Features

• Memory Technology  NAND flash using MLC (multi-level cell) technology providing non-volatile storage in a 32G × 8 organization for a total of 256 Gbit.
• Memory Capacity  256 Gbit total capacity suitable for large-volume data and code storage requirements.
• Interface & Clock  Parallel memory interface with a specified clock frequency of 267 MHz for synchronous parallel operation.
• Voltage Supply  Operates from a 2.7 V to 3.6 V supply range, matching common system power rails.
• Package  132-VBGA package (12 × 18) designed for compact board-level integration.
• Operating Temperature  Rated for ambient operation from 0°C to 70°C (TA).

Typical Applications

• Parallel NAND Storage: Use as 256 Gbit parallel NAND flash memory in systems that implement parallel flash interfaces for bulk non-volatile storage.
• Firmware and Code Storage: Storing firmware, boot code, or system images where a parallel flash footprint and 256 Gbit capacity are required.
• High-Capacity Embedded Memory: Embedded designs that need high-capacity non-volatile memory in a compact 132-VBGA package and that operate within the specified voltage and temperature ranges.

Unique Advantages

• Large Integrated Capacity: 256 Gbit in a single device reduces the need for multiple devices to achieve high storage volumes.
• Parallel Interface with Defined Clock: 267 MHz clock support provides a known timing parameter for system integration with parallel memory controllers.
• Compact VBGA Package: 132-VBGA (12 × 18) offers a compact footprint for space-constrained board layouts.
• Wide Supply Range: 2.7 V to 3.6 V operation aligns with common system power domains for straightforward power management.
• MLC NAND Technology: MLC implementation enables multi-bit storage per cell to achieve the specified 256 Gbit density.

Why Choose MT29F256G08CMCGBJ4-37R:G TR?

The MT29F256G08CMCGBJ4-37R:G TR delivers a 256 Gbit MLC NAND flash solution in a 132-VBGA package with a parallel interface and a 267 MHz clock specification. Its defined supply voltage range and operating temperature make it a predictable choice for designs that require substantial non-volatile storage in a compact form factor.

This device is suited to engineers and procurement teams specifying board-level parallel flash memory where capacity, package, and interface parameters must align with existing system architecture and power constraints, enabling straightforward integration and predictable behavior across the stated operating conditions.

Request a quote or submit an inquiry to the sales team for pricing, availability, and lead-time information on the MT29F256G08CMCGBJ4-37R:G TR.