MT29F64G08AMCBBH2-12:B TR

The MT29F64G08AMCBBH2-12:B TR is a 64 Gbit non-volatile NAND flash memory device in a parallel interface configuration. It is a FLASH - NAND architecture organized as 8G × 8, designed to provide high-density parallel storage in a compact 100‑TBGA package.

Key device characteristics include a 64 Gbit memory size, support for an 83 MHz clock, a 2.7 V to 3.6 V supply range, and an operating ambient temperature range of 0°C to 70°C—attributes intended for systems requiring parallel NAND storage with defined voltage and temperature specifications.

Key Features

• Memory Core Non-volatile FLASH - NAND memory with a total capacity of 64 Gbit arranged in an 8G × 8 organization for parallel data access.
• Interface & Performance Parallel memory interface supporting a clock frequency of 83 MHz to match parallel bus timing requirements.
• Voltage Supply Operates from 2.7 V to 3.6 V, accommodating common 3 V system power domains.
• Operating Temperature Specified ambient operating range of 0°C to 70°C (TA) for standard temperature environments.
• Package & Mounting Supplied in a 100‑TBGA package (12x18) for surface-mount applications where compact, high-density packaging is required.
• Memory Format & Organization FLASH memory format with 8G × 8 organization for straightforward mapping to parallel bus architectures.

Typical Applications

• Embedded Storage Systems Provides parallel NAND flash capacity for embedded designs that require 64 Gbit non-volatile storage.
• Legacy Parallel Interface Designs Suits systems that use a parallel memory interface and need a compact BGA footprint.
• Industrial and Consumer Electronics Fits products operating within 0°C to 70°C that need onboard flash storage with a 2.7 V–3.6 V supply.

Unique Advantages

• High-density Storage in a Compact Package: 64 Gbit NAND capacity packaged in a 100‑TBGA (12x18) reduces board area for high-density designs.
• Parallel Interface Support: Parallel memory organization and 8G × 8 layout provide compatibility with parallel bus architectures.
• Defined Clock Support: Supports an 83 MHz clock frequency for synchronous parallel operation.
• Flexible Supply Range: Operates across a 2.7 V to 3.6 V supply window to integrate with common 3 V systems.
• Standard Temperature Rating: Rated for 0°C to 70°C ambient operation for use in standard-temperature environments.
• Manufacturer Backing: Device is manufactured by Micron Technology Inc., providing traceability to a known supplier.

Why Choose MT29F64G08AMCBBH2-12:B TR?

The MT29F64G08AMCBBH2-12:B TR positions itself as a straightforward, high-density parallel NAND flash option for designs that require 64 Gbit of non-volatile storage in a compact BGA package. Its specified clock frequency, voltage range, and operating temperature make it suitable for systems that must meet concrete electrical and thermal constraints.

This device is well-suited for engineers and procurement teams specifying parallel FLASH memory from a recognized manufacturer (Micron Technology Inc.) who need clear, verifiable device parameters—capacity, interface type, package, supply voltage, and operating temperature—to match system requirements.

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