MT29F64G08CBCABH1-10Z:A
| Part Description |
IC FLASH 64GBIT PARALLEL 100VBGA |
|---|---|
| Quantity | 358 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CBCABH1-10Z:A – IC FLASH 64GBIT PARALLEL 100VBGA
The MT29F64G08CBCABH1-10Z:A is a 64 Gbit non-volatile FLASH NAND memory device in a 100-VBGA package. It is organized as 8G × 8 with a parallel memory interface and supports a 100 MHz clock frequency.
This device targets systems requiring high-density NAND storage with a parallel interface and operates from a 2.7 V to 3.6 V supply within an ambient temperature range of 0°C to 70°C. The 100-VBGA (12×18) package provides a compact footprint for board-level integration.
Key Features
- Memory Type Non-volatile FLASH NAND technology providing 64 Gbit of storage organized as 8G × 8 for high-density data retention.
- Interface & Performance Parallel memory interface with a specified clock frequency of 100 MHz to match system timing requirements.
- Voltage Range Operates from 2.7 V to 3.6 V, enabling use in systems designed for standard 3.3 V nominal supplies.
- Package 100-VBGA (12×18) package for compact mounting and predictable board layout considerations.
- Operating Temperature Rated for 0°C to 70°C ambient temperature (TA), suitable for typical commercial operating environments.
Typical Applications
- Embedded System Storage Provides high-density non-volatile storage for embedded designs that use a parallel memory interface.
- Consumer Electronics Used where 64 Gbit NAND capacity and a 100-VBGA footprint meet compact device requirements and standard supply voltages.
- Data Logging Suitable for applications requiring non-volatile retention of large datasets within the 0°C to 70°C operating range.
Unique Advantages
- High Storage Density: 64 Gbit capacity (8G × 8) enables substantial on-board non-volatile data storage in a single device.
- Parallel Interface Compatibility: Parallel memory interface and 100 MHz clock frequency simplify integration with systems that use parallel NAND architectures.
- Standard Supply Voltage: 2.7 V–3.6 V operating range aligns with common 3.3 V system rails, reducing additional power conversion requirements.
- Compact VBGA Package: 100-VBGA (12×18) package supports space-constrained PCB designs while maintaining robust mounting.
- Commercial Temperature Rating: 0°C to 70°C ambient range provides predictable performance across typical commercial environments.
Why Choose MT29F64G08CBCABH1-10Z:A?
The MT29F64G08CBCABH1-10Z:A combines high-density FLASH NAND storage with a parallel interface and a compact 100-VBGA package, offering a straightforward option for designs that require significant non-volatile capacity in a small footprint. Its 2.7 V–3.6 V supply compatibility and 0°C–70°C operating range make it suitable for many standard commercial applications.
Manufactured by Micron Technology Inc., this device fits designs that prioritize density, straightforward parallel integration, and predictable electrical and thermal characteristics over the long term.
Request a quote or submit an inquiry to check availability, lead times, and pricing for the MT29F64G08CBCABH1-10Z:A.
