MT29F64G08CBCDBJ4-6R:D

The MT29F64G08CBCDBJ4-6R:D is a 64 Gbit non-volatile NAND flash memory device in a 132-VBGA (12×18) package. It implements parallel NAND flash architecture and operates from a 2.7 V to 3.6 V supply with a listed clock frequency of 167 MHz and an ambient operating range of 0°C to 70°C.

This device is intended for designs that require parallel NAND flash storage with a compact VBGA package and standard voltage support, offering an option for embedded non-volatile memory implementations where the specified electrical and thermal ranges match system requirements.

Key Features

• Memory Type: Non-volatile NAND flash — 64 Gbit capacity organized as 8G x 8 for byte-wide parallel access.
• Interface & Organization: Parallel memory interface — organized as 8G × 8 to match parallel bus designs and controllers.
• Performance: 167 MHz clock frequency — documented clock rate for timing and interface planning.
• Power: 2.7 V to 3.6 V supply range — operates across common 3 V system rails.
• Package: 132-VBGA (12×18) — compact ball-grid array footprint for surface-mount integration.
• Operating Temperature: 0°C to 70°C (TA) — specified ambient temperature range for qualification in temperature-controlled applications.
• Mounting Type: Non-Volatile — device provided as a non-volatile memory component.

Typical Applications

• Embedded non-volatile storage: Use where a 64 Gbit parallel NAND flash device is required for storing firmware, configuration data, or bulk content within an embedded system.
• Memory subsystems: Suitable for designs that integrate parallel flash packages on PCB assemblies using a 132-VBGA (12×18) footprint and 3 V supply rails.
• Module integration: Can be used in modules or boards that expect byte-wide parallel NAND memory with 8G x 8 organization and the specified clocking and temperature ranges.

Unique Advantages

• High-density storage in a compact package: 64 Gbit capacity in a 132-VBGA (12×18) form factor helps conserve PCB area while providing significant non-volatile storage.
• Parallel interface compatibility: 8G x 8 organization and parallel memory interface align with designs that use byte-wide parallel buses and legacy parallel controllers.
• Standard 3 V supply range: 2.7 V–3.6 V operation simplifies power supply design in 3 V system architectures.
• Documented clock rate: 167 MHz clock frequency enables predictable timing analysis during system integration.
• Defined operating temperature: 0°C–70°C ambient rating provides clear thermal constraints for system-level qualification.

Why Choose IC FLASH 64GBIT PAR 132VBGA?

The MT29F64G08CBCDBJ4-6R:D positions itself as a high-density parallel NAND flash option for systems requiring 64 Gbit of non-volatile storage in a compact 132-VBGA package. Its 8G x 8 organization, parallel interface, and 167 MHz clocking provide clear integration points for designs that rely on byte-wide flash access and standard 3 V power rails.

This device is suited to customers and designs that need verifiable electrical and thermal limits (2.7 V–3.6 V supply, 0°C–70°C ambient) and prefer a VBGA package for board-level space optimization. Its specifications support predictable system integration and long-term sourcing for products matching these parameters.

Request a quote or submit an inquiry to receive pricing, lead-time, and availability information for the MT29F64G08CBCDBJ4-6R:D.