MT46V32M16P-6T:C TR

The MT46V32M16P-6T:C TR is a 512 Mbit DDR SDRAM organized as 32M × 16, offered by Micron Technology Inc. It implements a parallel memory interface delivering a clock frequency of 167 MHz and an access time of 700 ps.

Designed for board-level memory expansion where standard-temperature operation and compact packaging are required, the device provides a low-voltage supply range (2.3 V to 2.7 V) in a 66‑TSSOP (0.400", 10.16 mm width) package.

Key Features

• Core / Memory Architecture 512 Mbit DRAM organized as 32M × 16 providing byte-wide parallel access in a standard DRAM format.
• Technology DDR SDRAM technology with a parallel memory interface for synchronous data transfers.
• Performance Clock frequency of 167 MHz and an access time of 700 ps; write cycle time (word/page) of 15 ns for predictable timing behavior.
• Power Operates from a 2.3 V to 2.7 V supply range to support low-voltage system designs.
• Package & Temperature Supplied in a 66‑TSSOP package (0.400", 10.16 mm width) with an operating ambient temperature range of 0 °C to 70 °C (TA).
• Interface Parallel memory interface suitable for systems using standard DDR DRAM topologies.

Typical Applications

• Board-level memory expansion — Adds 512 Mbit of DDR SDRAM capacity for systems requiring parallel DRAM storage and predictable timing.
• Embedded systems — Provides low-voltage DDR memory in a compact 66‑TSSOP package for space-constrained modules operating at standard temperatures.
• Memory subsystems — Suited for designs that require a 32M × 16 organization and standard DDR timing characteristics.
• Prototyping and evaluation — Useful for evaluating parallel DDR performance at 167 MHz clock rates and 700 ps access times.

Unique Advantages

• Defined memory organization: 32M × 16 layout simplifies address mapping and board-level memory planning.
• Compact package footprint: 66‑TSSOP (0.400", 10.16 mm) allows integration into space-limited PCBs.
• Low-voltage operation: 2.3 V–2.7 V supply reduces system power and aligns with low-voltage DDR domains.
• Predictable timing: 167 MHz clock and 700 ps access time with a 15 ns write cycle time for consistent performance characterization.
• Standard-temperature rating: Operating range of 0 °C to 70 °C supports typical commercial deployments.

Why Choose IC DRAM 512MBIT PAR 66TSOP?

The MT46V32M16P-6T:C TR positions itself as a straightforward, low-voltage DDR SDRAM option for designs that require 512 Mbit of parallel DRAM with a 32M × 16 organization. Its combination of 167 MHz clocking, 700 ps access time, and a compact 66‑TSSOP package makes it suitable for systems prioritizing predictable timing and PCB space efficiency.

This device is appropriate for engineers specifying board-level memory expansion or embedded modules operating at commercial temperatures. The clear electrical and mechanical parameters simplify integration, qualification, and long-term BOM planning.

If you need pricing, availability, or a formal quote for MT46V32M16P-6T:C TR, request a quote or submit an inquiry to our sales team for further assistance.