MT46V32M16TG-5B:C TR

The MT46V32M16TG-5B:C TR is a 512 Mbit DRAM device implemented as DDR SDRAM with a 32M × 16 memory organization. It provides a parallel memory interface and is supplied in a 66-TSSOP package sized 0.400" (10.16 mm) in width.

Designed for systems that require a parallel DDR memory element, the device operates from a 2.5 V to 2.7 V supply and supports an operating ambient temperature range of 0 °C to 70 °C (TA), offering defined timing and electrical characteristics for integration into parallel-memory designs.

Key Features

• Memory Core 512 Mbit DRAM organized as 32M × 16, implemented as DDR SDRAM for parallel memory architectures.
• Performance Supports a clock frequency of 200 MHz with an access time of 700 ps and a write cycle time (word/page) of 15 ns.
• Interface Parallel memory interface suitable for designs requiring parallel DRAM connectivity.
• Power Operates from a 2.5 V to 2.7 V supply voltage range.
• Package 66-TSSOP (0.400", 10.16 mm width) supplier device package for surface-mount PCB implementations.
• Temperature Range Specified for an operating ambient temperature of 0 °C to 70 °C (TA).
• Memory Format Volatile DRAM intended for temporary data storage in systems using parallel memory components.

Typical Applications

• Parallel memory subsystems — Integration as a 512 Mbit DDR SDRAM device in systems that use parallel DRAM interfaces.
• Board-level memory expansion — Provides additional 32M × 16 memory capacity on PCBs requiring a 66-TSSOP package footprint.
• Data buffering — Used where volatile, parallel-access DRAM is required for temporary storage and staging of data.

Unique Advantages

• Defined DDR SDRAM architecture — 32M × 16 organization and DDR technology provide a clear memory structure for parallel implementations.
• Deterministic timing specs — 200 MHz clock frequency, 700 ps access time, and 15 ns write cycle time support predictable timing analysis.
• Industry-standard supply range — 2.5 V to 2.7 V operation aligns with systems designed around this voltage domain.
• Space-efficient package — 66-TSSOP (0.400", 10.16 mm width) enables surface-mount integration on compact PCBs.
• Commercial temperature coverage — Specified operation from 0 °C to 70 °C (TA) for typical commercial environments.

Why Choose MT46V32M16TG-5B:C TR?

The MT46V32M16TG-5B:C TR delivers a clearly defined 512 Mbit DDR SDRAM building block for designs that require parallel memory organization, deterministic timing, and a compact 66-TSSOP footprint. Its 32M × 16 architecture, 200 MHz clock support, and documented timing values make it suitable for integration where parallel DRAM elements are required.

This device is suited to engineers and procurement teams specifying board-level DRAM components in systems that operate within a 2.5 V–2.7 V supply environment and a 0 °C–70 °C ambient temperature range, offering predictable electrical and mechanical characteristics for ongoing product designs.

Request a quote or submit an inquiry to receive pricing, availability, and lead-time information for the MT46V32M16TG-5B:C TR.