MT46V32M8P-6T IT:G

IC DRAM 256MBIT PAR 66TSOP
Part Description

IC DRAM 256MBIT PAR 66TSOP

Quantity 417 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package66-TSOPMemory FormatDRAMTechnologySDRAM - DDR
Memory Size256 MbitAccess Time700 psGradeIndustrial
Clock Frequency167 MHzVoltage2.3V ~ 2.7VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word Page15 nsPackaging66-TSSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT46V32M8P-6T IT:G – IC DRAM 256Mbit PAR 66TSSOP

The MT46V32M8P-6T IT:G is a 256Mbit Double Data Rate (DDR) SDRAM device organized as 32M × 8 with four internal banks. It implements a pipelined DDR architecture with bidirectional data strobe and differential clock inputs for source-synchronous data capture.

This device targets systems requiring a parallel DDR memory interface with 2.3V–2.7V supply operation and industrial temperature range, offering a balance of timing performance and board-level package options for integration into memory subsystems.

Key Features

  • Core DDR Architecture Internal pipelined double-data-rate (DDR) operation enables two data accesses per clock cycle; differential clock inputs (CK/CK#) and a DLL align DQ/DQS transitions with CK.
  • Memory Organization & Capacity 256 Mbit total capacity organized as 32M × 8 with four internal banks for concurrent operation.
  • Performance & Timing Rated for 167 MHz operation (–6T timing grade / 6 ns cycle time, CL = 2.5) with an Access Time of 700 ps and a 2.0 ns data-out window at the 6T grade.
  • Interface & Data Handling Parallel memory interface with bidirectional data strobe (DQS) transmitted/received with data, data mask (DM) for write masking, and programmable burst lengths (BL = 2, 4, or 8).
  • Power Operates from a 2.3 V to 2.7 V supply range; supports VDD/VDDQ supply levels as specified for DDR operation and uses 2.5 V I/O signaling (SSTL_2-compatible).
  • Refresh & Reliability Supports auto refresh with a 64 ms, 8192-cycle refresh interval for commercial and industrial devices.
  • Package & Temperature Long-lead 66-TSSOP (0.400", 10.16 mm width) package; industrial operating temperature range –40°C to +85°C (TA).

Unique Advantages

  • Double-data-rate throughput: Two data accesses per clock cycle increase effective bandwidth for parallel DDR memory architectures.
  • Industry-standard I/O: 2.5 V SSTL_2-compatible I/O and DQS-based source-synchronous capture simplify timing alignment with common DDR host interfaces.
  • Deterministic timing grade: The –6T timing grade supports 167 MHz operation with a defined data-out window, facilitating predictable timing design.
  • Industrial temperature rating: –40°C to +85°C qualification supports deployments in temperature-variable environments.
  • Compact board footprint: 66-TSSOP package provides a standardized, board-friendly form factor for surface-mount integration.

Why Choose MT46V32M8P-6T IT:G?

The MT46V32M8P-6T IT:G delivers DDR SDRAM performance in a 256Mbit, 32M × 8 organization optimized for parallel memory interfaces. Its –6T timing grade, DQS-based source-synchronous capture, and SSTL_2-compatible I/O provide clear timing behavior for system designers targeting 167 MHz DDR operation.

With a 66-TSSOP package and an industrial temperature range, this device is suited to board-level memory replacements or upgrades where predictable DDR timing, compact packaging, and operation across –40°C to +85°C are required. The device’s refresh and timing features support reliable system memory behavior over typical operating conditions.

Request a quote or submit an inquiry to receive pricing, availability, and lead-time information for the MT46V32M8P-6T IT:G.

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