MT46V64M8FN-75 IT:D

The MT46V64M8FN-75 IT:D is a 512 Mbit DDR SDRAM device organized as 64M × 8 with a parallel memory interface. It delivers 133 MHz clock operation and low access latency, packaged in a compact 60-TFBGA (10 × 12.5 mm) footprint.

Designed for system-level memory integration, the device provides a defined operating voltage range and extended temperature support for deployments that require stable volatile memory performance.

Key Features

• Memory Architecture DDR SDRAM technology organized as 64M × 8 for a total memory size of 512 Mbit; parallel memory interface for conventional DDR controller connections.
• Performance 133 MHz clock frequency with an access time of 750 ps and a write cycle time (word/page) of 15 ns to support predictable timing in system memory operations.
• Power Operates from a 2.3 V to 2.7 V supply range, enabling low-voltage system designs and compatibility with DDR power rails.
• Package 60-TFBGA package (60-FBGA, 10 × 12.5 mm) for compact board-level integration where a small footprint is required.
• Environmental Range Specified operating temperature from −40°C to 85°C (TA) for extended-temperature applications.
• Memory Type Volatile DRAM format intended for standard DRAM use in system memory subsystems.

Typical Applications

• System memory modules — Acts as a parallel DDR SDRAM component for board-level memory implementations requiring 512 Mbit capacity.
• Embedded memory subsystems — Suited for embedded designs that need a compact FBGA package and defined timing characteristics.
• Board-level memory expansion — Used where additional volatile DDR memory is required with specified voltage and temperature ranges.

Unique Advantages

• Predictable timing characteristics: 133 MHz clock and 750 ps access time support consistent memory latency budgeting.
• Compact footprint: 60-TFBGA (10 × 12.5 mm) package reduces board area for space-constrained designs.
• Low-voltage operation: 2.3 V to 2.7 V supply range enables integration with low-voltage DDR power architectures.
• Extended temperature capability: −40°C to 85°C operating range supports deployment across a wide range of ambient conditions.
• Standard DRAM organization: 64M × 8 layout and parallel interface simplify integration with conventional DDR memory controllers.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT46V64M8FN-75 IT:D positions itself as a compact, performance-oriented DDR SDRAM device for designs that require 512 Mbit of volatile memory with defined timing and low-voltage operation. Its 60-TFBGA package and specified operating temperature range make it suitable for board-level integration where space and environmental stability matter.

This device is appropriate for engineers and procurement teams specifying parallel DDR DRAM capacity with clear electrical and timing characteristics. Its combination of compact packaging, voltage range, and timing specs provides predictable behaviour for system memory implementations.

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