MT46V64M8P-75Z:D

The MT46V64M8P-75Z:D is a 512 Mbit DDR SDRAM device organized as 64M × 8 with a parallel memory interface. It implements DDR SDRAM architecture with a 133 MHz clock frequency and is supplied in a 66-TSSOP package (0.400", 10.16 mm width).

Designed for systems that require compact, parallel DDR memory, the device offers defined timing parameters including a 750 ps access time and a 15 ns write cycle time (word page), and operates from a 2.3 V to 2.7 V supply within a 0°C to 70°C ambient range.

Key Features

• Memory Technology DDR SDRAM architecture providing double data rate operation with a parallel interface.
• Density & Organization 512 Mbit capacity organized as 64M × 8, suitable where byte-wide parallel memory is required.
• Performance 133 MHz clock frequency with a 750 ps access time and a 15 ns write cycle time (word page) for predictable timing behavior.
• Power Operates from a 2.3 V to 2.7 V supply range.
• Package Supplied in a 66-TSSOP (0.400", 10.16 mm width) package for compact board-level integration.
• Operating Environment Specified for 0°C to 70°C ambient temperature (TA).

Typical Applications

• Embedded systems — Use as parallel DDR system memory where a 512 Mbit DDR SDRAM with 64M × 8 organization is required.
• Consumer electronics — Integration into devices that require compact, parallel DRAM packaged in 66-TSSOP within the specified temperature and voltage ranges.
• Networking and communications — Memory buffering and temporary storage in designs compatible with a 133 MHz clock and the listed timing parameters.
• Industrial control — On-board memory for control systems operating within the specified 0°C to 70°C ambient range and 2.3 V to 2.7 V supply.

Unique Advantages

• 512 Mbit density in a compact package: 64M × 8 organization in a 66-TSSOP (0.400") footprint enables higher memory capacity without large board area.
• DDR SDRAM performance: 133 MHz clock frequency and DDR architecture deliver doubled data rate operation for parallel memory designs.
• Predictable timing: 750 ps access time and 15 ns write cycle time (word page) provide clearly defined timing for system design and verification.
• Low-voltage operation: 2.3 V to 2.7 V supply range supports designs targeting reduced core voltages.
• Commercial temperature rating: Specified operation from 0°C to 70°C for standard ambient environments.

Why Choose MT46V64M8P-75Z:D?

The MT46V64M8P-75Z:D offers a straightforward, defined DDR SDRAM solution with 512 Mbit density, compact 66-TSSOP packaging, and explicit timing and voltage specifications. Its combination of 64M × 8 organization, 133 MHz clock support, and measured timing values makes it suitable for designs that require clear, verifiable memory characteristics.

This device is appropriate for engineers and procurement teams specifying parallel DDR SDRAM for embedded, consumer, networking, or industrial applications that operate within the listed temperature and voltage ranges and need compact board-level integration.

To request a quote or discuss availability and pricing for MT46V64M8P-75Z:D, submit a request to your procurement channel or sales contact with the part number and required quantities.