MT46V64M8TG-75 IT:D TR

The MT46V64M8TG-75 IT:D TR is a 512 Mbit DDR SDRAM memory device manufactured by Micron Technology Inc. It implements a 64M × 8 memory organization with a parallel DRAM interface and DDR SDRAM architecture.

Designed for systems that require a 512 Mbit parallel memory solution, the device provides a 133 MHz clock frequency, sub-nanosecond access, a 66‑pin TSSOP package, and an industrial temperature range for deployment across a variety of board-level designs.

Key Features

• Core / Architecture DDR SDRAM architecture implemented as a 64M × 8 array to deliver 512 Mbit of volatile memory.
• Memory Capacity & Organization 512 Mbit total capacity organized as 64M × 8 for byte-wide parallel data transfers.
• Performance 133 MHz clock frequency with an access time of 750 ps to support mid‑range synchronous memory performance.
• Timing Write cycle time (word page) specified at 15 ns to characterize write throughput behavior.
• Power Operates from a 2.3 V to 2.7 V supply range.
• Package 66‑TSSOP package (0.400", 10.16 mm width) for space‑efficient board mounting.
• Operating Range Specified operating ambient temperature from −40°C to 85°C (TA).
• Interface Parallel DRAM interface optimized for synchronous parallel bus designs.

Typical Applications

• Parallel memory subsystems — Integration into systems that require a 512 Mbit parallel DDR SDRAM device with 64M × 8 organization.
• Board-level designs with 66‑TSSOP footprint — Use where a 66‑pin TSSOP package and compact footprint are required.
• Industrial-temperature systems — Suitable for applications that need operation across −40°C to 85°C ambient conditions.

Unique Advantages

• Verified DDR SDRAM architecture: Provides synchronous DDR operation in a 64M × 8 configuration for predictable parallel memory behavior.
• Measured timing and throughput: 133 MHz clock and 750 ps access time with a 15 ns write cycle time (word page) for system timing planning.
• Wide operating voltage window: 2.3 V to 2.7 V supply range supports systems designed around 2.5 V nominal rails.
• Industrial temperature rating: −40°C to 85°C ambient rating enables deployment in temperature‑sensitive applications.
• Compact TSSOP packaging: 66‑pin TSSOP (0.400", 10.16 mm) offers a small footprint for dense PCB layouts.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V64M8TG-75 IT:D TR provides a straightforward, specification-driven DDR SDRAM option for designers needing a 512 Mbit parallel memory device in a 66‑TSSOP package. With defined timing parameters, a 2.3–2.7 V supply range, and an extended ambient temperature spec, it is suitable for board-level designs that require predictable DDR performance and a compact footprint.

This device is appropriate for engineers and procurement teams looking for a documented, manufacturer-specified memory component for integration into parallel memory architectures where the listed electrical, timing, and mechanical attributes match system requirements.

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