MT46V64M8TG-75 IT:D

The MT46V64M8TG-75 IT:D is a 512 Mbit DDR SDRAM device organized as 64M x 8 with a parallel memory interface. It provides volatile DRAM storage in a 66-TSSOP (0.400", 10.16 mm width) package and operates from a 2.3 V to 2.7 V supply.

With a 133 MHz clock frequency, 750 ps access time and a write cycle time (word page) of 15 ns, this device is suited for systems that require mid-density DDR memory with defined timing and extended operating temperature support from -40°C to 85°C.

Key Features

• Memory Core and Technology DDR SDRAM architecture, volatile DRAM organized as 64M x 8 delivering 512 Mbit of storage capacity.
• Performance 133 MHz clock frequency with 750 ps access time and a 15 ns write cycle time (word page) for predictable memory timing.
• Interface Parallel memory interface compatible with parallel bus architectures requiring byte-wide DRAM devices.
• Power Low-voltage operation with a supply range of 2.3 V to 2.7 V to match low-voltage DDR system requirements.
• Package 66-TSSOP (0.400", 10.16 mm width) package offering a compact footprint for board-level integration.
• Operating Range Rated for ambient operating temperatures from -40°C to 85°C (TA) for use in temperature-variable environments.

Typical Applications

• Parallel memory subsystems — Acts as a 512 Mbit DDR component in parallel bus designs that require 64M x 8 organization.
• Embedded boards — Provides mid-density volatile storage for embedded systems where low-voltage (2.3 V–2.7 V) DDR is required.
• Temperature-challenged environments — Suited to designs requiring operation across -40°C to 85°C.

Unique Advantages

• Mid-density 512 Mbit capacity: Balances storage density and board area for systems that need substantial DRAM without higher-density tradeoffs.
• DDR SDRAM timing: Defined 133 MHz clock and 750 ps access time with a 15 ns word-page write cycle for consistent performance margins.
• Low-voltage operation: 2.3 V–2.7 V supply range supports modern low-voltage DDR designs and power-sensitive systems.
• Compact 66-TSSOP package: Space-efficient 66-pin TSSOP (10.16 mm width) simplifies routing and placement on dense PCBs.
• Extended temperature rating: -40°C to 85°C operating range enables deployment in systems with wide ambient temperature requirements.
• Parallel interface compatibility: Byte-wide (x8) organization aligns with parallel memory architectures for straightforward integration.

Why Choose IC DRAM 512MBIT PARALLEL 66TSOP?

The MT46V64M8TG-75 IT:D positions itself as a practical mid-density DDR SDRAM option combining 512 Mbit capacity, defined timing characteristics, and low-voltage operation. Its 66-TSSOP package and parallel interface make it suitable for board-level memory subsystems where compact package size and predictable DDR timing are important.

This device is ideal for engineers designing systems that require a 64M x 8 DDR memory element with operating capability from -40°C to 85°C, and where supply voltages are within the 2.3 V–2.7 V range. The combination of capacity, timing, package, and temperature rating supports robust, scalable designs with clear integration parameters.

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