MT47H128M4CF-25E:G TR

The MT47H128M4CF-25E:G TR is a 512 Mbit parallel DRAM device implemented in DDR2 SDRAM technology. It is organized as 128M × 4 and targets designs that require a compact, parallel-access memory component with a 60‑TFBGA (8×10) package.

With a clock frequency rating of 400 MHz, an access time of 400 ps, and a supply voltage range of 1.7 V to 1.9 V, this device is suited to applications that need DDR2 performance in a small BGA footprint across a commercial temperature range of 0 °C to 85 °C.

Key Features

• Core / Memory Architecture DDR2 SDRAM architecture organized as 128M × 4 delivering 512 Mbit total memory capacity.
• Performance Clock frequency rated at 400 MHz and access time specified at 400 ps to support high-speed parallel data transfers.
• Timing Write cycle time (word page) specified at 15 ns for predictable write performance in parallel memory operations.
• Power Operates from a 1.7 V to 1.9 V supply range, matching DDR2 voltage requirements.
• Package Supplied in a 60‑TFBGA package (60‑FBGA, 8×10) for compact board-level integration.
• Operating Range Rated for operation over a commercial temperature range of 0 °C to 85 °C.
• Memory Interface Parallel DRAM interface suitable for designs requiring conventional DDR2 parallel memory connectivity.

Typical Applications

• Embedded systems — Where a 512 Mbit DDR2 parallel memory in a 60‑FBGA footprint is required for system memory or buffering.
• Consumer electronics — Integration into compact boards that need DDR2 SDRAM at 400 MHz and a 1.7 V–1.9 V supply range.
• Industrial equipment — Use in commercial-temperature designs requiring predictable access times (400 ps) and defined write cycle timing (15 ns).

Unique Advantages

• Compact BGA package: 60‑TFBGA (8×10) package enables dense board placement and space-saving integration.
• DDR2 performance at 400 MHz: Provides a defined clock frequency for designs specifying DDR2 timing and throughput requirements.
• Precise timing characteristics: 400 ps access time and 15 ns write cycle time deliver predictable memory timing for system design and validation.
• <strong-Narrow voltage range: Operates from 1.7 V to 1.9 V to align with DDR2 power rails and simplify power-supply planning.
• Commercial temperature rating: 0 °C to 85 °C rating supports deployments within standard commercial operating environments.

Why Choose MT47H128M4CF-25E:G TR?

The MT47H128M4CF-25E:G TR positions itself as a compact DDR2 SDRAM option offering 512 Mbit capacity in a 60‑FBGA package, with defined timing (400 ps access time, 15 ns write cycle) and a 400 MHz clock frequency. These characteristics make it suitable for designs that require a standard DDR2 parallel memory element with clear electrical and timing specifications.

This device is appropriate for engineers and procurement teams building systems that need a reliable, specification-driven DDR2 memory option in a small package and commercial temperature range. Its clear supply voltage window and package information simplify integration into board layouts and power architectures.

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