MT47H128M4SH-25E:H TR

The MT47H128M4SH-25E:H TR is a 512 Mbit volatile DDR2 SDRAM device organized as 128M × 4. It provides parallel memory interface operation with a 400 MHz clock frequency and a 60-TFBGA (60-FBGA, 8×10) package footprint.

Designed for systems that require compact, high-frequency DDR2 memory, this device delivers defined timing characteristics and a narrow supply range to support consistent board-level integration within the specified operating temperature window.

Key Features

• Memory Technology  DDR2 SDRAM volatile memory organized as 128M × 4, delivering a total density of 512 Mbit.
• Performance  400 MHz clock frequency with an access time of 400 ps and a write-cycle time (word page) of 15 ns for deterministic timing behavior.
• Voltage  Operates from a 1.7 V to 1.9 V supply range, matching DDR2 supply requirements.
• Package  60-TFBGA package (60-FBGA, 8×10) for compact board-level integration.
• Interface  Parallel memory interface suitable for designs utilizing DDR2 parallel connections.
• Operating Temperature  Specified for 0°C to 85°C (TC), enabling use in standard commercial temperature environments.

Typical Applications

• Parallel memory interface systems  Provides 512 Mbit DDR2 SDRAM for designs that require parallel DDR2 memory modules with defined timing.
• Space-constrained PCBs  60-TFBGA package supports compact board layouts where board area is limited.
• Designs requiring fixed timing performance  400 MHz clock and 400 ps access time support applications needing predictable DDR2 timing.
• Commercial temperature-range products  Specified 0°C to 85°C operating range for standard commercial deployments.

Unique Advantages

• Defined DDR2 architecture  DDR2 SDRAM organization (128M × 4) and parallel interface make memory sizing and integration straightforward.
• High-frequency operation  400 MHz clock capability enables higher-bandwidth operation within DDR2 class constraints.
• Compact BGA footprint  60-TFBGA (60-FBGA, 8×10) minimizes board area while providing ball-grid connections for reliable mounting.
• Deterministic timing  400 ps access time and 15 ns write-cycle time (word page) support predictable memory performance on time-sensitive designs.
• Narrow supply range  1.7 V to 1.9 V supply specification aligns with DDR2 voltage requirements for consistent power integration.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT47H128M4SH-25E:H TR positions itself as a compact, performance-oriented DDR2 SDRAM option for designs that need 512 Mbit of volatile memory with parallel interface connectivity. Its specified 400 MHz clock rate, 400 ps access time, and 15 ns write-cycle time provide clear timing parameters for system integration.

With a 60-TFBGA package and a 1.7 V–1.9 V supply range, the device is suitable for applications where board space and defined DDR2 supply constraints are factors. It is appropriate for designers and procurement teams specifying DDR2 memory from Micron Technology Inc. for commercial-temperature applications.

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