MT48LC16M16A2P-6A AAT:G TR

IC DRAM 256MBIT PAR 54TSOP II
Part Description

IC DRAM 256MBIT PAR 54TSOP II

Quantity 1,643 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size256 MbitAccess Time5.4 nsGradeAutomotive
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 105°C (TA)Write Cycle Time Word Page12 nsPackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization16M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationAEC-Q100ECCNEAR99HTS Code8542.32.0024

Overview of MT48LC16M16A2P-6A AAT:G TR – IC DRAM 256MBIT PAR 54TSOP II

The MT48LC16M16A2P-6A AAT:G TR is a 256 Mbit SDRAM organized as 16M × 16 with a parallel memory interface. It delivers synchronous DRAM performance with a 167 MHz clock frequency and a 5.4 ns access time for systems requiring fast, external volatile memory.

Designed and qualified for automotive environments (AEC-Q100), the device supports a wide operating temperature range and a standard 3.0 V–3.6 V supply, making it suitable for automotive and other embedded applications that require AEC‑Q100 qualified memory.

Key Features

  • Memory Core 256 Mbit SDRAM organized as 16M × 16, providing a parallel DRAM memory format for external system memory.
  • Performance 167 MHz clock frequency and 5.4 ns access time support responsive data transfers; write cycle time (word/page) is 12 ns.
  • Power Operates from a 3.0 V to 3.6 V supply range.
  • Qualification & Reliability AEC‑Q100 qualification indicates the part meets automotive stress test requirements.
  • Package & Mounting Available in a 54‑TSOP II package (54‑TSOP, 0.400", 10.16 mm width) for surface-mount PCB designs.
  • Temperature Range Rated for −40 °C to 105 °C (TA), supporting broad ambient operating conditions.

Typical Applications

  • Automotive Systems — AEC‑Q100 qualification and wide temperature range make this SDRAM suitable for automotive electronic modules requiring external volatile memory.
  • Embedded Control Units — Parallel SDRAM interface and fast access time for systems that need deterministic external memory performance.
  • Industrial Electronics — Operating temperature and supply range support industrial embedded designs that use synchronous DRAM for buffering or working memory.

Unique Advantages

  • AEC‑Q100 Qualified: Provides an automotive-grade qualification that supports use in automotive and similarly demanding environments.
  • High-Speed SDRAM Performance: 167 MHz clock and 5.4 ns access time enable faster data throughput for external memory tasks.
  • Wide Operating Temperature: −40 °C to 105 °C rating helps maintain operation across extended ambient conditions.
  • Standard Voltage Range: 3.0 V–3.6 V supply compatibility simplifies integration with common system power rails.
  • Compact 54‑TSOP II Package: 54‑TSOP (0.400", 10.16 mm) package supports surface-mount assembly and board-space-aware designs.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The MT48LC16M16A2P-6A AAT:G TR balances synchronous DRAM performance with automotive-grade qualification for designs that need reliable external volatile memory. Its 16M × 16 organization, 167 MHz clock frequency, and sub-6 ns access time offer a straightforward memory solution for embedded systems requiring parallel SDRAM.

This device is well suited for engineers and procurement teams designing automotive and industrial electronics where AEC‑Q100 qualification, a wide temperature range, and a standard TSOP II footprint deliver predictable integration, thermal robustness, and supply interoperability.

To request a quote or discuss pricing and availability for MT48LC16M16A2P-6A AAT:G TR, please contact sales or submit a request for a formal quote.

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