MT48LC4M16A2P-7E AIT:J
| Part Description |
IC DRAM 64MBIT PAR 54TSOP II |
|---|---|
| Quantity | 387 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Automotive | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 14 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | AEC-Q100 | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC4M16A2P-7E AIT:J – 64Mbit Parallel SDRAM, 54-TSOP II
The MT48LC4M16A2P-7E AIT:J is a 64 Mbit volatile SDRAM organized as 4M × 16 with a parallel memory interface. It delivers system memory functionality with a 143 MHz clock frequency and a 5.4 ns access time for applications requiring fast, parallel DRAM access.
Designed and manufactured by Micron Technology Inc., the device is offered in a compact 54‑TSOP II package and is AEC‑Q100 qualified with an operating temperature range of -40°C to 85°C and a supply voltage range of 3.0 V to 3.6 V, addressing environments that demand automotive-grade componentry and extended temperature operation.
Key Features
- Memory Core 64 Mbit SDRAM organized as 4M × 16, providing a wide 16‑bit data path for parallel memory transfers.
- Performance 143 MHz clock frequency and 5.4 ns access time deliver low-latency reads; write cycle (word/page) time is 14 ns.
- Interface & Organization Parallel DRAM interface suitable for systems requiring synchronous parallel memory operation and straightforward bus integration.
- Power Operates from a 3.0 V to 3.6 V supply range, supporting common 3 V automotive and embedded power rails.
- Package & Mounting Supplied in a 54‑TSOP (0.400", 10.16 mm width) 54‑TSOP II package for board-level space optimization and standardized footprint.
- Temperature Range Specified for -40°C to 85°C (TA), enabling use in environments with extended ambient temperature requirements.
- Automotive Qualification AEC‑Q100 qualification denotes the device meets automotive reliability screening requirements.
Typical Applications
- Automotive Systems — Memory for control modules and subsystems where AEC‑Q100 qualification and extended temperature range are required.
- Embedded Control — Parallel SDRAM for microcontroller- or processor‑based designs needing a 16‑bit wide volatile memory.
- Industrial Electronics — System memory in industrial controllers and equipment operating across -40°C to 85°C ambient conditions.
Unique Advantages
- Automotive‑grade qualification: AEC‑Q100 certification provides documented screening for automotive reliability requirements.
- Deterministic timing: 5.4 ns access time and 14 ns write cycle timing support predictable memory performance for time‑sensitive designs.
- Wide parallel data path: 4M × 16 organization enables 16‑bit transfers for efficient bus utilization in parallel architectures.
- Broad operating conditions: Rated from -40°C to 85°C and 3.0 V–3.6 V supply operation to match common automotive and embedded power/thermal envelopes.
- Compact industry package: 54‑TSOP II footprint (0.400", 10.16 mm width) simplifies PCB layout and assembly for space‑constrained designs.
Why Choose MT48LC4M16A2P-7E AIT:J?
The MT48LC4M16A2P-7E AIT:J positions itself as a reliable, automotive‑qualified parallel SDRAM option where defined timing, a 16‑bit data bus, and extended temperature range are required. Its combination of 64 Mbit capacity, 143 MHz clocking, and compact 54‑TSOP II packaging makes it suitable for embedded and automotive system memory roles.
Manufactured by Micron Technology Inc., the device provides specification-driven performance and qualification for designs that need documented automotive screening and consistent electrical characteristics within the stated voltage and temperature ranges.
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