MT53D1024M32D4DT-053 AIT:D TR

The MT53D1024M32D4DT-053 AIT:D TR is a volatile SDRAM device implemented in Mobile LPDDR4 technology with a 32 Gbit density organized as 1G × 32. It operates at a clock frequency of 1.866 GHz and uses a 1.1 V supply.

Designed for integration where compact, high-density LPDDR4 memory is required, the device is provided in a 200-VFBGA package (10 × 14.5) and carries AEC-Q100 qualification with an operating temperature range of −40 °C to 95 °C.

Key Features

• Memory Core  Mobile LPDDR4 SDRAM architecture with a total capacity of 32 Gbit organized as 1G × 32.
• Clock Performance  Rated clock frequency of 1.866 GHz to meet timing requirements for LPDDR4-class designs.
• Supply Voltage  Low-voltage operation at 1.1 V to support power-sensitive applications.
• Package  200-VFBGA package with a 10 × 14.5 mm footprint for compact board integration.
• Temperature Range  Qualified for operation from −40 °C to 95 °C (TC) to support extended-temperature deployments.
• Automotive Qualification  AEC-Q100 qualification and an Automotive grade designation are provided in the device specification.
• Memory Type  Volatile DRAM suitable for system memory and high-speed buffering roles.

Typical Applications

• Automotive Systems  AEC-Q100 qualification and wide temperature range make the device suitable for automotive electronic modules that require LPDDR4 memory.
• Mobile and Handheld Devices  Mobile LPDDR4 technology and 1.1 V operation provide a compact, low-voltage memory option for space-constrained mobile designs.
• Embedded Systems  High-density 32 Gbit storage in a small 200-VFBGA package supports embedded platforms requiring large memory capacity in tight board spaces.

Unique Advantages

• High memory density: 32 Gbit capacity in a single device reduces board-level component count for large-memory designs.
• Compact packaging: 200-VFBGA (10 × 14.5 mm) package enables integration in size-constrained assemblies.
• Low-voltage operation: 1.1 V supply reduces system power draw compared to higher-voltage alternatives.
• Automotive-ready qualification: AEC-Q100 qualification and Automotive grade listing support use in regulated automotive environments.
• Extended temperature range: −40 °C to 95 °C (TC) supports deployment across a wide range of operating conditions.
• LPDDR4 performance class: 1.866 GHz clock rating aligns with LPDDR4 timing expectations for high-speed memory interfaces.

Why Choose IC DRAM 32GBIT 1.866GHZ 200VFBGA?

This LPDDR4 32 Gbit DRAM device balances high density, compact packaging, and low-voltage operation for designs that require significant memory capacity in constrained spaces. Its 1.866 GHz clock capability and 1.1 V supply make it suitable for systems targeting LPDDR4-class performance while minimizing power draw.

With AEC-Q100 qualification and an extended −40 °C to 95 °C operating range, the device is positioned for applications where reliability across temperature and industry qualification are important, including automotive and embedded systems that demand validated components and compact integration.

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