MT53D1024M64D8NW-062 WT ES:D
| Part Description |
IC DRAM 64GBIT 1.6GHZ 432VFBGA |
|---|---|
| Quantity | 212 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 432-VFBGA (15x15) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 1.6 GHz | Voltage | 1.1V | Memory Type | Volatile | ||
| Operating Temperature | -30°C ~ 85°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 432-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | N/A | Memory Organization | 1G x 64 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | N/A | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT53D1024M64D8NW-062 WT ES:D – IC DRAM 64GBIT 1.6GHZ 432VFBGA
The MT53D1024M64D8NW-062 WT ES:D is a volatile DRAM device implemented in mobile LPDDR4 SDRAM technology. It provides 64 Gbit of memory capacity in a 1G x 64 organization and is specified for 1.6 GHz clock operation.
Designed for compact, high-bandwidth implementations, the device targets applications that require high-density mobile LPDDR4 DRAM in a 432‑VFBGA (15×15) package with 1.1 V supply and an operating temperature range of −30 °C to 85 °C.
Key Features
- Memory Core Mobile LPDDR4 SDRAM architecture organized as 1G × 64 for a total memory size of 64 Gbit, implemented as DRAM volatile memory.
- Performance Rated for 1.6 GHz clock frequency to support high data-rate operation within its specified technology class.
- Power Single 1.1 V voltage supply specified for device operation.
- Package 432‑VFBGA package footprint (15 × 15 mm) suitable for space-constrained board designs.
- Operating Temperature Specified operating case temperature range of −30 °C to 85 °C (TC) for deployment across a range of environmental conditions.
Typical Applications
- Mobile devices Provides high-density LPDDR4 memory in a compact 432‑VFBGA package for mobile and handheld systems that require 64 Gbit DRAM.
- Embedded systems Supports embedded platforms requiring volatile DRAM at 1.6 GHz and low-voltage (1.1 V) operation.
- Compact high-bandwidth modules Suited for memory module designs needing a 1G × 64 organization and a small 15 × 15 mm package footprint.
Unique Advantages
- High memory density: 64 Gbit capacity in a single device reduces board-level component count for high-capacity memory designs.
- High-frequency operation: 1.6 GHz clock rating enables support for high data-rate requirements within the LPDDR4 class.
- Low-voltage operation: 1.1 V supply reduces power draw compared with higher-voltage alternatives where applicable.
- Compact BGA package: 432‑VFBGA (15×15) package minimizes PCB area for space-constrained assemblies.
- Wide temperature range: −30 °C to 85 °C (TC) supports deployment across varied thermal environments.
Why Choose IC DRAM 64GBIT 1.6GHZ 432VFBGA?
The MT53D1024M64D8NW-062 WT ES:D combines mobile LPDDR4 architecture, a 1.6 GHz clock rating, and 64 Gbit density in a compact 432‑VFBGA package, delivering a straightforward memory building block for designs that require high-density, high-frequency DRAM with low-voltage operation. Its specified operating temperature range and small package footprint make it suitable for tightly integrated mobile and embedded applications.
This device is appropriate for designers and procurement teams seeking a verified LPDDR4 DRAM component that aligns directly with system requirements for capacity, frequency, supply voltage, and package size, supporting predictable integration into memory subsystems.
Request a quote or contact sales to discuss pricing, availability, and lead times for the MT53D1024M64D8NW-062 WT ES:D.
