MT53D1G64D4NW-046 WT:A TR

IC DRAM 64GBIT 2.133GHZ FBGA QDP
Part Description

IC DRAM 64GBIT 2.133GHZ FBGA QDP

Quantity 110 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageN/AMemory FormatDRAMTechnologySDRAM - Mobile LPDDR4
Memory Size64 GbitAccess TimeN/AGradeN/A
Clock FrequencyN/AVoltageN/AMemory TypeN/A
Operating TemperatureN/AWrite Cycle Time Word PageN/APackagingN/A
Mounting MethodN/AMemory InterfaceN/AMemory Organization1G x 64
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unknown
QualificationN/AECCNOBSOLETEHTS CodeN/A

Overview of MT53D1G64D4NW-046 WT:A TR – IC DRAM 64GBIT 2.133GHZ FBGA QDP

The MT53D1G64D4NW-046 WT:A TR is a 64 Gbit DRAM device implemented in SDRAM - Mobile LPDDR4 technology. It is specified with a 2.133GHz data rate and a 1G × 64 memory organization.

This device targets designs that require high-density LPDDR4 DRAM memory in a FBGA QDP package format, providing a defined capacity and organization for memory subsystem integration.

Key Features

  • Memory Technology  SDRAM implemented as Mobile LPDDR4, as specified in the product data.
  • Memory Capacity  64 Gbit total memory size, stated explicitly in the product description.
  • Memory Organization  1G × 64 organization, providing a 64-bit data width as listed in the specifications.
  • Data Rate  2.133GHz data rate indicated in the product name for performance characterization.
  • Memory Format  DRAM format, specified in the product description.
  • Package Identifier  FBGA QDP referenced in the product name as the package style.
  • Manufacturer  Micron Technology Inc., listed as the device manufacturer.

Typical Applications

  • Mobile devices  Use where Mobile LPDDR4 SDRAM is required to provide the specified 64 Gbit capacity and 2.133GHz data rate.
  • Memory subsystems  Integration into high-density DRAM arrays or modules that match the 1G × 64 organization and FBGA QDP package.
  • High-density memory integration  Suitable for designs that require a 64 Gbit LPDDR4 DRAM component with defined package and organization.

Unique Advantages

  • High memory capacity:  64 Gbit capacity provides a defined density for designs requiring large on-board DRAM.
  • Defined data-rate specification:  2.133GHz data rate is provided in the product identification for performance planning.
  • Wide data path:  1G × 64 organization delivers a 64-bit data interface as specified.
  • Mobile LPDDR4 architecture:  Specifies the SDRAM technology class used in the device.
  • Package format specified:  FBGA QDP indicated in the product name to guide mechanical and assembly planning.
  • Established manufacturer:  Provided by Micron Technology Inc., listed as the manufacturer in the product data.

Why Choose MT53D1G64D4NW-046 WT:A TR?

The MT53D1G64D4NW-046 WT:A TR consolidates a 64 Gbit DRAM capacity with a 1G × 64 organization and a 2.133GHz data rate within a FBGA QDP package, using Mobile LPDDR4 SDRAM technology. This combination provides a clear specification set for designers planning memory density, data-rate performance, and package integration.

This device is appropriate for projects and customers requiring a defined LPDDR4 DRAM component from Micron Technology Inc., where explicit capacity, organization, and data-rate values are primary selection criteria.

Request a quote or contact sales to discuss availability, pricing, and to obtain further ordering information for the MT53D1G64D4NW-046 WT:A TR.

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