MT53D4G16D8AL-062 WT:E TR

The MT53D4G16D8AL-062 WT:E TR is a volatile DRAM device implementing mobile LPDDR4 SDRAM architecture with a 64 Gbit capacity. It is organized as 4G × 16 and operates at a clock frequency of 1.6 GHz with a 1.1 V supply.

This device is intended for designs that require high-density, high-speed mobile LPDDR4 memory and offers a specified operating temperature range of -30°C to 85°C for temperature-sensitive applications.

Key Features

• Memory Core – Mobile LPDDR4 SDRAM Implements mobile LPDDR4 SDRAM technology suitable for systems requiring LPDDR4 architecture.
• Capacity and Organization 64 Gbit total capacity organized as 4G × 16 to support high-density memory configurations.
• High-Speed Operation Designed for a clock frequency of 1.6 GHz to support fast memory throughput requirements.
• Low Voltage Supply Operates at a 1.1 V supply voltage, aligning with low-voltage mobile memory power domains.
• Volatile DRAM Classified as volatile memory and provided in DRAM format for temporary data storage in active systems.
• Extended Operating Temperature Specified to operate from -30°C to 85°C (TC), supporting use across a range of environmental conditions.

Typical Applications

• Mobile Devices — High-density LPDDR4 memory for mobile platforms that require 64 Gbit capacity and 1.6 GHz operation.
• Memory Modules and Subsystems — Component for high-density memory arrays using 4G × 16 organization to meet capacity targets.
• Embedded and Portable Electronics — Low-voltage (1.1 V) DRAM for designs where power efficiency and compact memory are required.
• Industrial Electronics — Applicable in applications needing memory components that operate across -30°C to 85°C.

Unique Advantages

• Significant Density: 64 Gbit capacity enables consolidation of memory needs into fewer devices.
• LPDDR4 Architecture: Mobile LPDDR4 implementation provides architecture-aligned behavior for mobile memory designs.
• High Clock Rate: 1.6 GHz clock frequency supports higher-speed memory transactions where required.
• Low Voltage Operation: 1.1 V supply reduces power domain requirements and supports low-power system design.
• Wide Temperature Range: Specified -30°C to 85°C operation suited to a variety of environmental conditions.
• Clear Component Identity: Manufactured by Micron Technology Inc., providing traceable sourcing information.

Why Choose MT53D4G16D8AL-062 WT:E TR?

The MT53D4G16D8AL-062 WT:E TR positions itself as a high-density, high-speed mobile LPDDR4 DRAM option providing 64 Gbit capacity in a 4G × 16 organization. Its 1.6 GHz clock rate and 1.1 V supply make it suitable for designs that balance performance and low-voltage operation within LPDDR4 architectures.

This device is appropriate for engineers and procurement teams targeting compact, high-capacity memory implementations in mobile, embedded, or industrial systems that require operation across -30°C to 85°C and prefer components from an established manufacturer, Micron Technology Inc.

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